FGH75T65SHDT - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FGH75T65SHDT650 V, 75 A Field Stop Trench IGBTFeatures General Description Maximum Junction Temperature: TJ = 175oC Using novel field stop IGBT technology, ON Semiconductors new series of field stop 3rd generation IGBTs offer the optimum Positive Temperature Co-efficient for Easy Parallel Operatingperformance for solar inverter, UPS, welder, telecom, ESS and High Cur

IGBT - Field Stop, Trench650 V, 75 AFGH75T65SHDTL4DescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 3rd generation IGBTs offer the optimumwww.onsemi.comperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplications where low conduction and switching losses are essential.VCES ICFeatures650 V 75 A Maximum Junc

IGBT - Field Stop, Trench650 V, 75 AProduct PreviewFGH75T65SHDTLN4Using the novel field stop 3rd generation IGBT technology,FGH75T65SHDTLN4 offers the optimum performance for solarwww.onsemi.cominverter, UPS, welder, telecom, ESS and PFC applications where lowconduction loss and switching loss are essential.Features75 A, 650 V Maximum Junction Temperature: TJ = 175C

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur