FGH75T65UPD-F085 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGH75T65UPD-F085
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 375 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.69 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 43 nS
Coesⓘ - Capacitancia de salida, typ: 205 pF
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
FGH75T65UPD-F085 Datasheet (PDF)
fgh75t65upd-f085.pdf

IGBT - Field Stop, Trench650 V, 75 AFGH75T65UPD-F085DescriptionUsing Novel Field Stop Trench IGBT Technology,ON Semiconductors new series of Field Stop Trench IGBTs offerwww.onsemi.comthe optimum performance for Automotive chargers, Solar Inverter,UPS and Digital Power Generator where low conduction andswitching losses are essential.CFeatures Maximum Junction Tempe
fgh75t65upd fgh75t65upd-f155.pdf

IGBT - Field Stop, Trench650 V, 75 AFGH75T65UPD,FGH75T65UPD-F155Descriptionwww.onsemi.comUsing innovative field stop trench IGBT technology,ON Semiconductors new series of field-stop trench IGBTs offeroptimum performance for solar inverter, UPS, welder, and digitalCpower genera-tor where low conduction and switching losses areessential.FeaturesG Maximum Junctio
fgh75t65upd.pdf

August 2012FGH75T65UPD650V, 75A Field Stop Trench IGBTFeatures General Description Maximum Junction Temperature : TJ = 175oC Using Novel Field Stop Trench IGBT Technology, Fairchildsnew series of Field Stop Trench IGBTs offer the optimum perfor- Positive Temperaure Co-efficient for easy parallel operatingmance for Solar Inverter , UPS and Digital Power Generator High
Otros transistores... FGH75T65SHD , FGH75T65SHDT , FGH75T65SHDTL4 , FGH75T65SHDTLN4 , FGH75T65SQD , FGH75T65SQDT , FGH75T65SQDTL4 , FGH75T65UPD-F155 , SGH80N60UFD , FGHL40S65UQ , FGHL40T65MQD , FGHL50T65MQD , FGHL50T65MQDT , FGHL50T65SQ , FGHL50T65SQDT , FGHL75T65LQDT , FGHL75T65MQD .
History: 2MBI150L-060 | DF160R12W2H3_B11 | IXGH40N120A2 | DM2G100SH6N | 2MBI150L-120 | APT75GN60SDQ2G | MMG300D170B
History: 2MBI150L-060 | DF160R12W2H3_B11 | IXGH40N120A2 | DM2G100SH6N | 2MBI150L-120 | APT75GN60SDQ2G | MMG300D170B



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
a933 transistor | d209l | irfb4321 | 2n333 | c3852 | irfp140 | ksc2383 datasheet | 2n3906 equivalent