FGHL40S65UQ Todos los transistores

 ..1. Size:246K  onsemi
 fghl40s65uq.pdf

FGHL40S65UQ Product Preview Field Stop Trench IGBT 40 A, 650 V Using the novel field stop generation IGBT technology, ON Semiconductor s new series of field stop 4th generation of RC www.onsemi.com IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating a

 8.1. Size:346K  onsemi
 afghl40t65sqd.pdf

 8.2. Size:331K  onsemi
 afghl40t65sq.pdf

Field Stop Trench IGBT 40 A, 650 V AFGHL40T65SQ Using the novel field stop 4th generation high speed IGBT technology. AFGHL40T65SQ which is AEC Q101 qualified offers the optimum performance for both hard and soft switching topology in www.onsemi.com automotive application. It is a stand-alone IGBT. Features AEC-Q101 Qualified 40 A, 650 V Maximum Junction Temperature TJ = 175

 8.3. Size:400K  onsemi
 afghl40t65spd.pdf

Field Stop Trench IGBT 40 A, 650 V AFGHL40T65SPD Description Using the novel field stop 3rd generation IGBT technology, AFGHL40T65SPD offers the optimum performance with both low www.onsemi.com conduction loss and switching loss for a high efficiency operation in various applications, which provides 50 V higher blocking voltage VCES Eon VCE(Sat) and rugged high current switching relia

 8.4. Size:330K  onsemi
 fghl40t65mqd.pdf

Field Stop Trench IGBT 650 V, 40 A FGHL40T65MQD Field stop 4th generation mid speed IGBT technology and full current rated copak Diode technology. Features www.onsemi.com Maximum Junction Temperature TJ = 175 C Positive Temperature Co-efficient for Easy Parallel Operating High Current Capability BVCES VCE(sat) TYP IC MAX Low Saturation Voltage VCE(sat) = 1.45 V (Typ