FGHL40S65UQ - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FGHL40S65UQProduct PreviewField Stop Trench IGBT40 A, 650 VUsing the novel field stop generation IGBT technology,ON Semiconductors new series of field stop 4th generation of RCwww.onsemi.comIGBTs offer superior conduction and switching performance and easyparallel operation. This device is well suited for the resonant or softswitching application such as induction heating a

Field Stop Trench IGBT40 A, 650 VAFGHL40T65SQDUsing the novel field stop 4th generation high speed IGBTtechnology. AFGHL40T65SQD which is AEC Q101 qualified offersthe optimum performance for both hard and soft switching topology inwww.onsemi.comautomotive application.Features AEC-Q101 Qualified40 A, 650 V, Maximum Junction Temperature: TJ = 175CVCESat = 1.6 V

Field Stop Trench IGBT40 A, 650 VAFGHL40T65SQUsing the novel field stop 4th generation high speed IGBTtechnology. AFGHL40T65SQ which is AEC Q101 qualified offers theoptimum performance for both hard and soft switching topology inwww.onsemi.comautomotive application. It is a stand-alone IGBT.Features AEC-Q101 Qualified40 A, 650 V Maximum Junction Temperature: TJ = 175

Field Stop Trench IGBT40 A, 650 VAFGHL40T65SPDDescriptionUsing the novel field stop 3rd generation IGBT technology,AFGHL40T65SPD offers the optimum performance with both lowwww.onsemi.comconduction loss and switching loss for a high efficiency operation invarious applications, which provides 50 V higher blocking voltageVCES Eon VCE(Sat)and rugged high current switching relia

Field Stop Trench IGBT650 V, 40 AFGHL40T65MQDField stop 4th generation mid speed IGBT technology and fullcurrent rated copak Diode technology.Featureswww.onsemi.com Maximum Junction Temperature: TJ = 175C Positive Temperature Co-efficient for Easy Parallel Operating High Current Capability BVCES VCE(sat) TYP IC MAX Low Saturation Voltage: VCE(sat) = 1.45 V (Typ