FGHL50T65MQDT Todos los transistores

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Field Stop Trench IGBT 650 V, 50 A FGHL50T65MQD Field stop 4th generation mid speed IGBT technology and full current rated copak Diode technology. Features www.onsemi.com Maximum Junction Temperature TJ = 175 C Positive Temperature Co-efficient for Easy Parallel Operating BVCES VCE(sat) TYP IC MAX High Current Capability 650 V 1.45 V 50 A Low Saturation Voltage VC

IGBT - Field Stop, Trench 650 V, 50 A Product Preview FGHL50T65SQDT Using novel field stop IGBT technology, ON Semiconductor s new www.onsemi.com series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. 50 A, 650 V VCESat = 1.47 V (Typ.) Feature

FGHL50T65SQ IGBT for PFC Applications 650 V, 50 A, TO-247-3L Features Maximum Junction Temperature TJ = 175 C Positive Temperature Co-efficient for Easy Parallel Operating www.onsemi.com High Current Capability Low Saturation Voltage VCE(sat) =1.6 V (Typ.) @ IC = 50 A 100% of the Parts Tested for ILM (Note 1) BVCES VCE(sat) TYP IC MAX High Input Impedance

Field Stop Trench IGBT 50 A, 650 V AFGHL50T65SQ Using the novel field stop 4th generation high speed IGBT technology. AFGHL50T65SQ which is AEC Q101 qualified offers the optimum performance for both hard and soft switching topology in www.onsemi.com automotive application. It is a stand-alone IGBT. Features AEC-Q101 Qualified 50 A, 650 V Maximum Junction Temperature TJ = 175

AFGHL50T65SQDC Hybrid IGBT 50 A, 650 V Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology, AFGHL50T65SQDC offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, especially totem pole bridgeless PFC and www.onsemi.com Inverter. Features 50 A, 650 V