FGHL50T65SQ - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FGHL50T65SQIGBT for PFC Applications650 V, 50 A, TO-247-3LFeatures Maximum Junction Temperature: TJ = 175C Positive Temperature Co-efficient for Easy Parallel Operatingwww.onsemi.com High Current Capability Low Saturation Voltage: VCE(sat) =1.6 V (Typ.) @ IC = 50 A 100% of the Parts Tested for ILM (Note 1)BVCES VCE(sat) TYP IC MAX High Input Impedance

IGBT - Field Stop, Trench650 V, 50 AProduct PreviewFGHL50T65SQDTUsing novel field stop IGBT technology, ON Semiconductors newwww.onsemi.comseries of field stop 4th generation IGBTs offer the optimumperformance for solar inverter, UPS, welder, telecom, ESS and PFCapplications where low conduction and switching losses are essential.50 A, 650 VVCESat = 1.47 V (Typ.)Feature

Field Stop Trench IGBT50 A, 650 VAFGHL50T65SQUsing the novel field stop 4th generation high speed IGBTtechnology. AFGHL50T65SQ which is AEC Q101 qualified offers theoptimum performance for both hard and soft switching topology inwww.onsemi.comautomotive application. It is a stand-alone IGBT.Features AEC-Q101 Qualified50 A, 650 V Maximum Junction Temperature: TJ = 175

Field Stop Trench IGBT50 A, 650 VAFGHL50T65SQDUsing the novel field stop 4th generation high speed IGBTtechnology. AFGHL50T65SQD which is AEC Q101 qualified offersthe optimum performance for both hard and soft switching topology inwww.onsemi.comautomotive application.Features AEC-Q101 Qualified50 A, 650 V, Maximum Junction Temperature: TJ = 175CVCESat = 1.6 V

AFGHL50T65SQDC Hybrid IGBT 50 A, 650 VUsing the novel field stop 4th generation IGBT technology and the1.5th generation SiC Schottky Diode technology,AFGHL50T65SQDC offers the optimum performance with both lowconduction and switching losses for high efficiency operations invarious applications, especially totem pole bridgeless PFC and www.onsemi.comInverter.Features50 A, 650 V