FGY75T120SQDN Todos los transistores

 

FGY75T120SQDN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGY75T120SQDN
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 790 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 96 nS
   Coesⓘ - Capacitancia de salida, typ: 242 pF
   Qgⓘ - Carga total de la puerta, typ: 399 nC
   Paquete / Cubierta: TO247

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FGY75T120SQDN Datasheet (PDF)

 ..1. Size:618K  onsemi
fgy75t120sqdn.pdf

FGY75T120SQDN
FGY75T120SQDN

FGY75T120SQDNUltra Field Stop IGBT, 1200 V, 75 AGeneral DescriptionThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and provideswww.onsemi.comsuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar appli

 8.1. Size:658K  onsemi
fgy75t95lqdt.pdf

FGY75T120SQDN
FGY75T120SQDN

IGBT - Field Stop, Trench75 A, 950 VProduct PreviewFGY75T95LQDTTrench Field Stop 4th generation Low Vcesat IGBT co-packagedwith full current rated diode.www.onsemi.comFeatures Maximum Junction Temperature : TJ = 17575 A, 950 V Positive Temperature Co-efficient for Easy Parallel OperatingVCESat = 1.31 V (Typ.) High Current CapabilityC Low Saturation Vol

 8.2. Size:585K  onsemi
fgy75t95sqdt.pdf

FGY75T120SQDN
FGY75T120SQDN

IGBT - Field Stop, Trench75 A, 950 VProduct PreviewFGY75T95SQDTTrench Field Stop 4th generation High Speed IGBT co-packagedwith full current rated diode.www.onsemi.comFeatures Maximum Junction Temperature : TJ = 17575 A, 950 V Positive Temperature Co-efficient for Easy Parallel OperatingVCESat = 1.69 V (Typ.) High Current CapabilityC Low Saturation Vol

 9.1. Size:602K  1
fgy75n60smd.pdf

FGY75T120SQDN
FGY75T120SQDN

June 2014FGY75N60SMD600 V, 75 A Field Stop IGBTFeatures General Description High Current Capability Using novel field stop IGBT technology, Fairchilds new series of field stop 2nd generation IGBTs offer the optimum perfor- Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 75 Amance for solar inverter, UPS, welder and PFC applications High Input Impedancewhere low co

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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