FGY75T95LQDT Todos los transistores

 

FGY75T95LQDT - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGY75T95LQDT
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 453 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 950 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.31 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.4 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 24 nS
   Coesⓘ - Capacitancia de salida, typ: 266 pF
   Qgⓘ - Carga total de la puerta, typ: 663.3 nC
   Paquete / Cubierta: TO247

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FGY75T95LQDT Datasheet (PDF)

 ..1. Size:658K  onsemi
fgy75t95lqdt.pdf

FGY75T95LQDT
FGY75T95LQDT

IGBT - Field Stop, Trench75 A, 950 VProduct PreviewFGY75T95LQDTTrench Field Stop 4th generation Low Vcesat IGBT co-packagedwith full current rated diode.www.onsemi.comFeatures Maximum Junction Temperature : TJ = 17575 A, 950 V Positive Temperature Co-efficient for Easy Parallel OperatingVCESat = 1.31 V (Typ.) High Current CapabilityC Low Saturation Vol

 6.1. Size:585K  onsemi
fgy75t95sqdt.pdf

FGY75T95LQDT
FGY75T95LQDT

IGBT - Field Stop, Trench75 A, 950 VProduct PreviewFGY75T95SQDTTrench Field Stop 4th generation High Speed IGBT co-packagedwith full current rated diode.www.onsemi.comFeatures Maximum Junction Temperature : TJ = 17575 A, 950 V Positive Temperature Co-efficient for Easy Parallel OperatingVCESat = 1.69 V (Typ.) High Current CapabilityC Low Saturation Vol

 8.1. Size:618K  onsemi
fgy75t120sqdn.pdf

FGY75T95LQDT
FGY75T95LQDT

FGY75T120SQDNUltra Field Stop IGBT, 1200 V, 75 AGeneral DescriptionThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and provideswww.onsemi.comsuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar appli

 9.1. Size:602K  1
fgy75n60smd.pdf

FGY75T95LQDT
FGY75T95LQDT

June 2014FGY75N60SMD600 V, 75 A Field Stop IGBTFeatures General Description High Current Capability Using novel field stop IGBT technology, Fairchilds new series of field stop 2nd generation IGBTs offer the optimum perfor- Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 75 Amance for solar inverter, UPS, welder and PFC applications High Input Impedancewhere low co

Otros transistores... FGP15N60UNDF , FGPF15N60UNDF , FGPF4565 , FGY100T65SCDT , FGY120T65SPD-F085 , FGY40T120SMD , FGY60T120SQDN , FGY75T120SQDN , STGB10NB37LZ , FGY75T95SQDT , FPF2C110BI07AS2 , FPF2C8P2NL07A , FPF2G120BF07AS , HGT1S7N60A4S9A , ISL9V2040D3S , ISL9V2040S3S , ISL9V2040P3 .

 

 
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