IXGH20N30 Todos los transistores

 ..1. Size:146K  ixys
 ixgh20n30 ixgh20n30s.pdf

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 ixgh20n30.pdf

IXGH20N30 VCES = 300 V HiPerFASTTM IGBT IC25 = 40 A VCE(sat)typ = 1.45 V tfi(typ) = 180 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C; RGE = 1 M 300 V VGES Continuous 20 V VGEM Transient 30 V G C (TAB) IC25 TC = 25 C40 A C E IC90 TC = 90 C20 A ICM TC = 25 C, 1 ms 80 A G = Gate, C = Collector, E = E

 7.1. Size:568K  ixys
 ixgh20n120b ixgt20n120b.pdf

IXGH 20N120B VCES = 1200 V High Voltage IGBT IXGT 20N120B IC25 = 40 A VCE(sat) = 3.4 V Preliminary Data Sheet tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C40 A TO-247 AD (IXGH) IC110 TC = 110 C20 A ICM

 7.2. Size:53K  ixys
 ixgh20n100 ixgt20n100.pdf

IXGH 20N100 VCES = 1000 V IGBT IXGT 20N100 IC25 = 40 A VCE(sat) = 3.0 V tfi(typ) = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1000 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V E VGES Continuous 20 V (TAB) VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25 C40 A IC90 TC = 90 C20 A ICM TC = 25 C, 1 ms 80 A S

 7.3. Size:234K  ixys
 ixgh20n120a3.pdf

VCES = 1200V GenX3TM 1200V IGBTs IXGA20N120A3 IC110 = 20A IXGP20N120A3 VCE(sat) 2.5V IXGH20N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V G

 7.4. Size:104K  ixys
 ixgh20n120.pdf

VCES = 1200 V IXGH 20N120 IGBT IC25 = 40 A IXGT 20N120 VCE(sat) = 2.5 V tfi(typ) = 380 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V G D S IC25 TC = 25 C40 A IC90 TC = 90 C20 A TO-268 (IXGT) ICM TC = 25 C, 1 ms 80 A

 7.5. Size:236K  ixys
 ixga20n120a3 ixgh20n120a3 ixgp20n120a3.pdf

VCES = 1200V GenX3TM 1200V IGBTs IXGA20N120A3 IC110 = 20A IXGP20N120A3 VCE(sat) 2.5V IXGH20N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V G

 7.6. Size:64K  ixys
 ixgh20n60-a ixgm20n60-a.pdf

VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGH/IXGM 20 N60 600 V 40 A 2.5 V High speed IGBT IXGH/IXGM 20 N60A 600 V 40 A 3.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C40 A IC90 TC = 90 C20 A TO-204 AE (IXGM) ICM TC = 25 C, 1 ms

 7.7. Size:565K  ixys
 ixgh20n120b.pdf

IXGH 20N120B VCES = 1200 V High Voltage IGBT IXGT 20N120B IC25 = 40 A VCE(sat) = 3.4 V Preliminary Data Sheet tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C40 A TO-247 AD (IXGH) IC110 TC = 110 C20 A ICM

 7.8. Size:106K  ixys
 ixgh20n120 ixgt20n120.pdf

VCES = 1200 V IXGH 20N120 IGBT IC25 = 40 A IXGT 20N120 VCE(sat) = 2.5 V tfi(typ) = 380 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V G D S IC25 TC = 25 C40 A IC90 TC = 90 C20 A TO-268 (IXGT) ICM TC = 25 C, 1 ms 80 A

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 ixgh20n140c3h1.pdf

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 ixgh20n100a3.pdf

Advance Technical Information VCES = 1000V GenX3TM 1000V IXGA20N100A3 IC90 = 20A IGBTs IXGP20N100A3 VCE(sat) 2.3V IXGH20N100A3 Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-263 (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXGP) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C, RGE = 1M 1000 V VGES Continuous 20 V

 7.11. Size:52K  ixys
 ixgh20n60bd1.pdf

IXGH 20N60BD1 HiPerFASTTM IGBT VCES = 600 V IXGT 20N60BD1 with Diode IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V E C (TAB) VGES Continuous 20 V VGEM Transient 30 V TO-247 AD IC25 TC = 25 C40 A (IXGH) IC90 TC = 90 C20 A

 7.12. Size:79K  ixys
 ixgh20n60b.pdf

VCES = 600 V IXGH 20N60B HiPerFASTTM IGBT IC25 = 40 A IXGT 20N60B VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-268 (D3) (IXGT) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G (TAB) E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C40 A TO-247 AD (IXGH) IC90 TC = 90 C20 A ICM T

 7.13. Size:52K  ixys
 ixgh20n100.pdf

IXGH 20N100 VCES = 1000 V IGBT IXGT 20N100 IC25 = 40 A VCE(sat) = 3.0 V tfi(typ) = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1000 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V E VGES Continuous 20 V (TAB) VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25 C40 A IC90 TC = 90 C20 A ICM TC = 25 C, 1 ms 80 A S