NGTB10N60R2DT4G Todos los transistores

 

NGTB10N60R2DT4G - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NGTB10N60R2DT4G
   Tipo de transistor: IGBT + Diode
   Código de marcado: GTB1060R
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 72
   Tensión máxima colector-emisor |Vce|, V: 600
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 20
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.7
   Tensión máxima de puerta-umbral |VGE(th)|, V: 7
   Temperatura máxima de unión (Tj), ℃: 175
   Tiempo de subida (tr), typ, nS: 34
   Capacitancia de salida (Cc), typ, pF: 45
   Carga total de la puerta (Qg), typ, nC: 53
   Paquete / Cubierta: DPAK

 Búsqueda de reemplazo de NGTB10N60R2DT4G - IGBT

 

NGTB10N60R2DT4G Datasheet (PDF)

 0.1. Size:619K  onsemi
ngtb10n60r2dt4g.pdf

NGTB10N60R2DT4G NGTB10N60R2DT4G

NGTB10N60R2DT4G IGBT www.onsemi.com 600V, 10A, N-Channel Features Electrical Connection Reverse Conducting II IGBT N-Channel IGBT VCE(sat)=1.7V (typ) [IC=10A, VGE=15V] 2,4 IGBT tf=65ns (typ) Diode VF=1.5V (typ) [IF=10A] Diode trr=90ns (typ) 5s Short Circuit Capability 11:Gate2:CollectorApplications 3:Emitter34:Collector

 9.1. Size:176K  onsemi
ngtb15n60eg.pdf

NGTB10N60R2DT4G NGTB10N60R2DT4G

NGTB15N60EGIGBT - Short-Circuit RatedThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Non-Punch Through (NPT) Trench construction, andprovides superior performance in demanding switching applications.Offering both low on state voltage and minimal switching loss, theIGBT is well suited for motor drive control and other hard switchinghttp://onsemi.co

 9.2. Size:175K  onsemi
ngtb15n120lwg.pdf

NGTB10N60R2DT4G NGTB10N60R2DT4G

NGTB15N120LWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the device

 9.3. Size:172K  onsemi
ngtb15n120ihl.pdf

NGTB10N60R2DT4G NGTB10N60R2DT4G

NGTB15N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 9.4. Size:185K  onsemi
ngtb15n120fl.pdf

NGTB10N60R2DT4G NGTB10N60R2DT4G

NGTB15N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di

 9.5. Size:132K  onsemi
ngtb15n60s1eg.pdf

NGTB10N60R2DT4G NGTB10N60R2DT4G

NGTB15N60S1EGIGBT - Short-Circuit RatedThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Non-Punch Through (NPT) Trench construction, andprovides superior performance in demanding switching applications.Offering both low on state voltage and minimal switching loss, theIGBT is well suited for motor drive control and other hard switchingwww.onsemi.com

 9.6. Size:124K  onsemi
ngtb15n120ih.pdf

NGTB10N60R2DT4G NGTB10N60R2DT4G

NGTB15N120IHWGProduct PreviewIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching applications.15 A, 1200

 9.7. Size:185K  onsemi
ngtb15n120flwg.pdf

NGTB10N60R2DT4G NGTB10N60R2DT4G

NGTB15N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di

 9.8. Size:267K  onsemi
ngtb15n120fl2wg.pdf

NGTB10N60R2DT4G NGTB10N60R2DT4G

NGTB15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softwww.on

 9.9. Size:175K  onsemi
ngtb15n120ihr.pdf

NGTB10N60R2DT4G NGTB10N60R2DT4G

NGTB15N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 9.10. Size:175K  onsemi
ngtb15n120ihrwg.pdf

NGTB10N60R2DT4G NGTB10N60R2DT4G

NGTB15N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 9.11. Size:124K  onsemi
ngtb15n120ihwg.pdf

NGTB10N60R2DT4G NGTB10N60R2DT4G

NGTB15N120IHWGProduct PreviewIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching applications.15 A, 1200

 9.12. Size:233K  onsemi
ngtb15n120fl2.pdf

NGTB10N60R2DT4G NGTB10N60R2DT4G

NGTB15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fa

 9.13. Size:177K  onsemi
ngtb15n60s1.pdf

NGTB10N60R2DT4G NGTB10N60R2DT4G

NGTB15N60S1EGIGBT - Short-Circuit RatedThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Non-Punch Through (NPT) Trench construction, andprovides superior performance in demanding switching applications.Offering both low on state voltage and minimal switching loss, theIGBT is well suited for motor drive control and other hard switchinghttp://onsemi.

 9.14. Size:1122K  onsemi
ngtb15n135ihrwg.pdf

NGTB10N60R2DT4G NGTB10N60R2DT4G

 9.15. Size:194K  onsemi
ngtb15n135ihr.pdf

NGTB10N60R2DT4G NGTB10N60R2DT4G

NGTB15N135IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 9.16. Size:175K  onsemi
ngtb15n120l.pdf

NGTB10N60R2DT4G NGTB10N60R2DT4G

NGTB15N120LWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the device

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , TGAN20N135FD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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