AIKW50N65DH5 Todos los transistores

 

AIKW50N65DH5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AIKW50N65DH5
   Tipo de transistor: IGBT + Diode
   Código de marcado: AK50EDH5
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 270
   Tensión máxima colector-emisor |Vce|, V: 650
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 80
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.66
   Tensión máxima de puerta-umbral |VGE(th)|, V: 4.8
   Temperatura máxima de unión (Tj), ℃: 175
   Tiempo de subida (tr), typ, nS: 12
   Capacitancia de salida (Cc), typ, pF: 69
   Carga total de la puerta (Qg), typ, nC: 116
   Paquete / Cubierta: TO247

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AIKW50N65DH5 Datasheet (PDF)

 ..1. Size:1980K  infineon
aikw50n65dh5.pdf

AIKW50N65DH5
AIKW50N65DH5

AIKW50N65DH5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparallel diodeCFeatures and Benefits: High speed H5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTsG 650V breakdown voltageE

 4.1. Size:1985K  infineon
aikw50n65df5.pdf

AIKW50N65DH5
AIKW50N65DH5

AIKW50N65DF5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparallel diodeCFeatures and Benefits: High speed F5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltageG Low gate charge QGE IGBT copacked with RAPID 1 f

 6.1. Size:1971K  infineon
aikw50n60ct.pdf

AIKW50N65DH5
AIKW50N65DH5

AIKW50N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled diodeCFeatures: Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175CG Dynamically stress testedE Shor

Otros transistores... AIKQ100N60CT , AIKQ120N60CT , AIKW20N60CT , AIKW30N60CT , AIKW40N65DF5 , AIKW40N65DH5 , AIKW50N60CT , AIKW50N65DF5 , IKW75N60T , AIKW75N60CT , AUIRGP4062D-E , AUIRGP4063D-E , AUIRGPS4070D0 , BSM150GB60DLC , DDB2U30N08VR , DDB6U134N16RR-B11 , DDB6U180N16RR-B11 .

 

 
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