AUIRGP4063D-E Todos los transistores

 ..1. Size:325K  international rectifier
 auirgp4063d auirgp4063d-e.pdf

AUIRGP4063D AUTOMOTIVE GRADE AUIRGP4063D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (ON) Trench IGBT Technology IC = 60A, TC = 100 C Low switching losses Maximum Junction temperature 175 C G tSC 5 s, TJ(max) = 175 C 5 S short circuit SOA Square RBSOA E VCE(on) typ. = 1.6V 100% of the

 3.1. Size:337K  international rectifier
 auirgp4063d.pdf

AUIRGP4063D AUTOMOTIVE GRADE AUIRGP4063D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (ON) Trench IGBT Technology IC = 60A, TC = 100 C Low switching losses Maximum Junction temperature 175 C G tSC 5 s, TJ(max) = 175 C 5 S short circuit SOA Square RBSOA E VCE(on) typ. = 1.6V 100% of the

 5.1. Size:314K  international rectifier
 auirgp4062d.pdf

PD - 96353A AUIRGP4062D AUIRGP4062D-E INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 24A, TC = 100 C Low VCE (on) Trench IGBT Technology Low Switching Losses G tSC 5 s, TJ(max) = 175 C 5 s SCSOA Square RBSOA E VCE(on) typ. = 1.60V 100% of The Parts Tested for ILM Positive VCE (on) Temperature Co

 5.2. Size:621K  international rectifier
 auirgb4062d auirgp4062d auirgp4062d-e.pdf

PD - 96353 AUIRGB4062D AUIRGP4062D AUIRGP4062D-E C INSULATED GATE BIPOLAR TRANSISTOR WITH VCES = 600V ULTRAFAST SOFT RECOVERY DIODE IC = 24A, TC = 100 C Features Low VCE (on) Trench IGBT Technology G tSC 5 s, TJ(max) = 175 C Low Switching Losses 5 s SCSOA E Square RBSOA VCE(on) typ. = 1.60V 100% of The Parts Tested for ILM n-channel Positive V

 5.3. Size:432K  international rectifier
 auirgp4062d1.pdf

AUIRGP4062D1 AUTOMOTIVE GRADE AUIRGP4062D1-E INSULATED GATE BIPOLAR TRANSISTOR WITH C VCES = 600V ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5 s SCSOA G tSC 5 s, TJ(max) = 175 C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient. E VCE(on) ty

 5.4. Size:363K  international rectifier
 auirgp4066d1.pdf

AUIRGP4066D1 AUTOMOTIVE GRADE AUIRGP4066D1-E INSULATED GATE BIPOLAR TRANSISTOR WITH C VCES = 600V ULTRAFAST SOFT RECOVERY DIODE Features IC(Nominal) = 75A Low VCE (ON) Trench IGBT Technology Low switching losses G tSC 5 s, TJ(max) = 175 C Maximum Junction temperature 175 C 5 S short circuit SOA E VCE(on) typ. = 1.70V Square RBSOA n-channel 100

 5.5. Size:554K  infineon
 auirgp4062d auirgp4062d-e.pdf