IXGH24N50BU1 Todos los transistores

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IXGH24N50BU1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGH24N50BU1

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 500V

Voltaje de saturación colector-emisor (Vce sat):

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 48A

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 80

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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IXGH24N50BU1 Datasheet (PDF)

3.1. ixgh24n170a ixgt24n170a.pdf Size:519K _ixys

IXGH24N50BU1
IXGH24N50BU1

IXGH 24N170A VCES = 1700 V High Voltage IXGT 24N170A IC25 = 24 A IGBT VCE(sat) = 6.0 V tfi(typ) = 45 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C; RGE = 1 M? 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25C24 A TO-247 AD (IXGH) IC90 TC = 90C16 A ICM TC = 25C, 1

3.2. ixgh24n60aui.pdf Size:117K _ixys

IXGH24N50BU1
IXGH24N50BU1

VCES = 600 V IXGH 24N60AU1 HiPerFASTTM IC25 = 48 A IXGH 24N60AU1S IGBT with Diode VCE(sat) = 2.7 V Combi Pack tfi = 275 ns TO-247 SMD (24N60AU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V G C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD IC25 TC = 25C48 A (24N60AU1) IC90 TC = 90C24 A ICM TC

3.3. ixgh24n170a.pdf Size:222K _igbt

IXGH24N50BU1
IXGH24N50BU1

Preliminary Technical Information High Voltage VCES = 1700V IXGH24N170A IGBTs IXGT24N170A IC25 = 24A ≤ VCE(sat) ≤ ≤ 6.0V ≤ ≤ tfi(typ) = 40ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V G C (TAB) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V C E VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 24 A TO-268 (IX

3.4. ixgh24n60cd1.pdf Size:101K _igbt

IXGH24N50BU1
IXGH24N50BU1

IXGH 24N60CD1 VCES = 600 V HiPerFASTTM IGBT IXGT 24N60CD1 IC25 = 48 A with Diode VCE(sat) = 2.5 V Lightspeed Series Preliminary data TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C48 A TO-247 AD (IXGH) IC110 TC = 110°C24 A

3.5. ixgh24n60c4.pdf Size:92K _igbt

IXGH24N50BU1
IXGH24N50BU1

Advance Technical Information High-Gain IGBTs VCES = 600V IXGP24N60C4 IC110 = 24A IXGH24N60C4 ≤ ≤ VCE(sat) ≤ 2.70V ≤ ≤ tfi(typ) = 68ns High-Speed PT Trench IGBTs TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V G C Tab VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V E VGES Continuous ±20 V VGEM Transient ±30 V TO-247 AD (IX

3.6. ixgh24n120c3h1.pdf Size:139K _igbt

IXGH24N50BU1
IXGH24N50BU1

Preliminary Technical Information VCES = 1200V GenX3TM 1200V IGBT IXGH24N120C3H1 IC25 = 48A ≤ VCE(sat) ≤ ≤ 4.2V ≤ ≤ High speed PT IGBTs for tfi(typ) = 110ns 10-50kHz Switching Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V G IC25 TC = 25°C48 T

3.7. ixgh24n60c4d1.pdf Size:233K _igbt

IXGH24N50BU1
IXGH24N50BU1

VCES = 600V High-Gain IGBT IXGH24N60C4D1 IC110 = 24A w/ Diode ≤ ≤ VCE(sat) ≤ 2.70V ≤ ≤ tfi(typ) = 68ns High-Speed PT Trench IGBT TO-247 AD Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 600 V C Tab E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V G = Gate C = Collector VGEM Transient ±30 V E = Emitter

3.8. ixgh24n120c3.pdf Size:188K _igbt

IXGH24N50BU1
IXGH24N50BU1

Preliminary Technical Information VCES = 1200V GenX3TM 1200V IGBT IXGA24N120C3 IC25 = 48A IXGH24N120C3 ≤ VCE(sat) ≤ ≤ 4.2V ≤ IXGP24N120C3 ≤ High speed PT IGBTs for tfi(typ) = 110ns 10-50kHz Switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V G E VGES Continuous ±20 V C (TAB) V

3.9. ixgh24n170.pdf Size:113K _igbt

IXGH24N50BU1
IXGH24N50BU1

Advance Technical Information VCES = 1700V High Voltage IXGH24N170 IC25 = 50A IGBT IXGT24N170 ≤ VCE(sat) ≤ ≤ 3.3V ≤ ≤ tfi(typ) = 250ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V G C C (TAB) VGES Continuous ± 20 V E VGEM Transient ± 30 V TO-268 (IXGT) IC25 TC = 25°C 50 A IC9

3.10. ixgh24n170ah1.pdf Size:223K _igbt

IXGH24N50BU1
IXGH24N50BU1

Preliminary Technical Information High Voltage VCES = 1700V IXGH24N170AH1 IGBTs w/Diode IXGT24N170AH1 IC25 = 24A ≤ VCE(sat) ≤ ≤ 6.0V ≤ ≤ tfi(typ) = 40ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V G C (TAB) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V C E VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 24 A

3.11. ixgh24n60b.pdf Size:137K _igbt

IXGH24N50BU1
IXGH24N50BU1

IXGH 24N60B VCES = 600 V HiPerFASTTM IGBT IC25 = 48 A VCE(sat) = 2.3 V tfi = 80 ns Preliminary Data TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V C (TAB) G IC25 TC = 25°C48 A C E IC90 TC = 90°C24 A G = Gate, C = Collector, ICM TC = 25°C, 1 ms 96 A

3.12. ixgh24n60c.pdf Size:52K _igbt

IXGH24N50BU1
IXGH24N50BU1

IXGH 24N60C VCES = 600 V HiPerFASTTM IGBT IXGT 24N60C IC25 = 48 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 60 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V C (TAB) E VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C48 A TO-247 AD (IXGH) IC110 TC = 110°

Otros transistores... IXGH20N30 , IXGH20N30S , IXGH20N60B , IXGH20N60BD1 , IXGH22N50B , IXGH22N50BU1 , IXGH22N50C , IXGH24N50B , G12N60C3D , IXGH24N60B , IXGH24N60BU1 , IXGH24N60C , IXGH24N60CD1 , IXGH25N100 , IXGH25N100A , IXGH25N100AU1 , IXGH25N100U1 .

 


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Introduzca al menos 1 números o letras