IGW40N60DTP - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGW40N60DTP
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 246 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 67 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 60 pF
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IGW40N60DTP - IGBT
IGW40N60DTP Datasheet (PDF)
igw40n60dtp.pdf
IGBTTRENCHSTOPTM Performance technologyIGW40N60DTP600V IGBT TRENCHSTOPTM Performance seriesData sheetIndustrial Power ControlIGW40N60TPTRENCHSTOPTM Performance Series600V DuoPack IGBTTRENCHSTOPTM Performance seriesFeatures: CTRENCHSTOPTM technology offering very low VCEsat low turn-off losses short tail current low EMI G maximum junction tempera
igw40n60h3 rev2 1g.pdf
IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW40N60H3600V IGBTHigh speed switching series third generationData SheetIndustrial & MultimarketIGW40N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI maximum junction temperature 175
igw40n60tp.pdf
IGBTTRENCHSTOPTM Performance technologyIGW40N60DTP600V IGBT TRENCHSTOPTM Performance seriesData sheetIndustrial Power ControlIGW40N60TPTRENCHSTOPTM Performance Series600V DuoPack IGBTTRENCHSTOPTM Performance seriesFeatures: CTRENCHSTOPTM technology offering very low VCEsat low turn-off losses short tail current low EMI G maximum junction tempera
igw40n60h3.pdf
IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW40N60H3600V IGBTHigh speed switching series third generationData SheetIndustrial Power ControlIGW40N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI Very soft, fast recovery anti-para
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2