IGW40N60DTP IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGW40N60DTP
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 246 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 67 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 60 pF
Encapsulados: TO247
Búsqueda de reemplazo de IGW40N60DTP IGBT
- Selección ⓘ de transistores por parámetros
IGW40N60DTP datasheet
igw40n60dtp.pdf
IGBT TRENCHSTOPTM Performance technology IGW40N60DTP 600V IGBT TRENCHSTOPTM Performance series Data sheet Industrial Power Control IGW40N60TP TRENCHSTOPTM Performance Series 600V DuoPack IGBT TRENCHSTOPTM Performance series Features C TRENCHSTOPTM technology offering very low V CEsat low turn-off losses short tail current low EMI G maximum junction tempera
igw40n60h3 rev2 1g.pdf
IGBT High speed IGBT in Trench and Fieldstop technology IGW40N60H3 600V IGBT High speed switching series third generation Data Sheet Industrial & Multimarket IGW40N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI maximum junction temperature 175
igw40n60tp.pdf
IGBT TRENCHSTOPTM Performance technology IGW40N60DTP 600V IGBT TRENCHSTOPTM Performance series Data sheet Industrial Power Control IGW40N60TP TRENCHSTOPTM Performance Series 600V DuoPack IGBT TRENCHSTOPTM Performance series Features C TRENCHSTOPTM technology offering very low V CEsat low turn-off losses short tail current low EMI G maximum junction tempera
igw40n60h3.pdf
IGBT High speed IGBT in Trench and Fieldstop technology IGW40N60H3 600V IGBT High speed switching series third generation Data Sheet Industrial Power Control IGW40N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI Very soft, fast recovery anti-para
Otros transistores... FD150R12RT4 , FD1600-1200R17HP4-K-B2 , IGB15N65S5 , IGB20N65S5 , IGB50N65H5 , IGB50N65S5 , IGU04N60T , IGW30N60TP , IKW30N60H3 , IGW50N60TP , IGW75N65H5 , IGZ100N65H5 , IGZ50N65H5 , IGZ75N65H5 , IHFW40N65R5S , IHW25N120E1 , IHW30N120R5 .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
6426 mosfet | b1565 | nce82h140 | 2n2369 equivalent | 2sd313 datasheet | k8a50d datasheet | 2sc381 | datasheet mosfet




