IGW75N65H5 Todos los transistores

 

IGW75N65H5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IGW75N65H5
   Tipo de transistor: IGBT
   Código de marcado: G75EH5
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 395
   Tensión máxima colector-emisor |Vce|, V: 650
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 120
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.65
   Tensión máxima de puerta-umbral |VGE(th)|, V: 4.8
   Temperatura máxima de unión (Tj), ℃: 175
   Tiempo de subida (tr), typ, nS: 33
   Capacitancia de salida (Cc), typ, pF: 80
   Carga total de la puerta (Qg), typ, nC: 160
   Paquete / Cubierta: TO247

 Búsqueda de reemplazo de IGW75N65H5 - IGBT

 

IGW75N65H5 Datasheet (PDF)

 ..1. Size:1756K  infineon
igw75n65h5.pdf

IGW75N65H5 IGW75N65H5

IGW75N65H5High speed series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologies Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low Q EG Maximum junction temperature 175C Qualified accord

 7.1. Size:1543K  infineon
igw75n60h3.pdf

IGW75N65H5 IGW75N65H5

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW75N60H3600V high speed switching series third generationData sheetIndustrial & MultimarketIGW75N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI maximum junction temperature 175C

 7.2. Size:479K  infineon
igw75n60t.pdf

IGW75N65H5 IGW75N65H5

IGW75N60T TRENCHSTOP Series q Low Loss IGBT: IGBT in TRENCHSTOP and Fieldstop technology CFeatures: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s G Designed for : E - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers :

 7.3. Size:397K  infineon
igw75n60t rev2 5g.pdf

IGW75N65H5 IGW75N65H5

IGW75N60T TrenchStop Series q Low Loss IGBT in TrenchStop and Fieldstop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G Designed for : E - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 600 V applications offers : PG-TO-247-3

Otros transistores... IGB15N65S5 , IGB20N65S5 , IGB50N65H5 , IGB50N65S5 , IGU04N60T , IGW30N60TP , IGW40N60DTP , IGW50N60TP , SGT60N60FD1P7 , IGZ100N65H5 , IGZ50N65H5 , IGZ75N65H5 , IHFW40N65R5S , IHW25N120E1 , IHW30N120R5 , IHW30N135R5 , IHW30N160R5 .

 

 
Back to Top

 


IGW75N65H5
  IGW75N65H5
  IGW75N65H5
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ

 

 

 
Back to Top