IXGH24N60C IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXGH24N60C datasheet

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IXGH 24N60C VCES = 600 V HiPerFASTTM IGBT IXGT 24N60C IC25 = 48 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 60 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C48 A TO-247 AD (IXGH) IC110 TC = 110

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IXGH 24N60CD1 VCES = 600 V HiPerFASTTM IGBT IXGT 24N60CD1 IC25 = 48 A with Diode VCE(sat) = 2.5 V Lightspeed Series Preliminary data TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C48 A TO-247 AD (IXGH) IC110 TC = 110 C24 A

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VCES = 600V High-Gain IGBT IXGH24N60C4D1 IC110 = 24A w/ Diode VCE(sat) 2.70V tfi(typ) = 68ns High-Speed PT Trench IGBT TO-247 AD Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C Tab E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G = Gate C = Collector VGEM Transient 30 V E = Emitter

0.3. Size:92K ixys
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Advance Technical Information High-Gain IGBTs VCES = 600V IXGP24N60C4 IC110 = 24A IXGH24N60C4 VCE(sat) 2.70V tfi(typ) = 68ns High-Speed PT Trench IGBTs TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G C Tab VCGR TJ = 25 C to 150 C, RGE = 1M 600 V E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD (IX

Otros transistores... IXGH20N60BD1 , IXGH22N50B , IXGH22N50BU1 , IXGH22N50C , IXGH24N50B , IXGH24N50BU1 , IXGH24N60B , IXGH24N60BU1 , IKW75N60T , IXGH24N60CD1 , IXGH25N100 , IXGH25N100A , IXGH25N100AU1 , IXGH25N100U1 , IXGH25N120 , IXGH28N30 , IXGH28N30A .