IKW50N65EH5 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IKW50N65EH5  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 275 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃

trⓘ - Tiempo de subida, typ: 29 nS

Coesⓘ - Capacitancia de salida, typ: 90 pF

Encapsulados: TO247

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IKW50N65EH5 datasheet

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IKW50N65EH5

IKW50N65EH5 High speed series fifth generation High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with full-rated RAPID 1 fast and soft antiparallel diode C Features and Benefits High speed H5 technology offering Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs G 650V breakdown voltage E

 6.1. Size:1913K  infineon
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IKW50N65EH5

Reverse Conducting Series Reverse conducting IGBT with monolithic body diode IKW50N65WR5 Data sheet Inductrial Power Control IKW50N65WR5 Reverse Conducting Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic diode optimized for ZCS applications TRENCHSTOPTM 5 technology applications offers - high ruggedness, temperature stable behavior

 6.2. Size:2112K  infineon
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IKW50N65EH5

IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKW50N65H5A 650V DuoPack IGBT and diode High speed switching series fifth generation Data sheet Industrial Power Control IKW50N65H5A High speed switching series fifth generation High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antipar

 6.3. Size:1980K  infineon
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IKW50N65EH5

AIKW50N65DH5 High speed switching series fifth generation High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode C Features and Benefits High speed H5 technology offering Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs G 650V breakdown voltage E

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