IKW75N65EH5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW75N65EH5
Tipo de transistor: IGBT + Diode
Código de marcado: K75EEH5
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 395
Tensión máxima colector-emisor |Vce|, V: 650
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 90
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.65
Tensión máxima de puerta-umbral |VGE(th)|, V: 4.8
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 33
Capacitancia de salida (Cc), typ, pF: 130
Carga total de la puerta (Qg), typ, nC: 160
Paquete / Cubierta: TO247
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IKW75N65EH5 Datasheet (PDF)
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