IRG4PH50KDPBF Todos los transistores

 

IRG4PH50KDPBF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRG4PH50KDPBF
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 200
   Tensión máxima colector-emisor |Vce|, V: 1200
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 45
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.77
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 100
   Capacitancia de salida (Cc), typ, pF: 140
   Paquete / Cubierta: TO247

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IRG4PH50KDPBF Datasheet (PDF)

 ..1. Size:676K  infineon
irg4ph50kdpbf.pdf

IRG4PH50KDPBF
IRG4PH50KDPBF

PD- 95189IRG4PH50KDPbFShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODEFeatures C High short circuit rating optimized for motor control,VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.77VG switching speed Tighter parameter distribution a

 4.1. Size:227K  international rectifier
irg4ph50kd.pdf

IRG4PH50KDPBF
IRG4PH50KDPBF

PD- 91575BIRG4PH50KDShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control, VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15VVCE(on) typ. = 2.77V Combines low conduction losses with highG switching speed

 5.1. Size:68K  international rectifier
irg4ph50k.pdf

IRG4PH50KDPBF
IRG4PH50KDPBF

PD - 9.1576IRG4PH50KShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTCFeatures High short circuit rating optimized for motor control,VCES = 1200Vtsc =10s, VCC = 720V, TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.77Vswitching speedG Latest generation design provides tighter@VGE = 15V, IC = 24AEparameter distr

 6.1. Size:126K  international rectifier
irg4ph50s.pdf

IRG4PH50KDPBF
IRG4PH50KDPBF

PD -91712AIRG4PH50SI T D T I T I T I TFeaturesFeaturesFeaturesFeaturesFeaturesC Standard: Optimized for minimum saturationVCES =1200V voltage and low operating frequencies (

 6.2. Size:220K  international rectifier
irg4ph50s-e.pdf

IRG4PH50KDPBF
IRG4PH50KDPBF

PD -96225IRG4PH50S-EPbFINSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBTFeaturesC Standard: Optimized for minimum saturationVCES =1200V voltage and low operating frequencies (

 6.3. Size:295K  international rectifier
auirg4ph50s.pdf

IRG4PH50KDPBF
IRG4PH50KDPBF

AUTOMOTIVE GRADEAUIRG4PH50SINSULATED GATE BIPOLAR TRANSISTORCVCES = 1200VFeaturesIC = 81A@ TC = 100C Standard: Optimized for minimum saturationGvoltage and low operating frequencies (

 6.4. Size:229K  international rectifier
irg4ph50ud.pdf

IRG4PH50KDPBF
IRG4PH50KDPBF

PD 91573AIRG4PH50UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 2.78V New IGBT design provides tighterG parameter distribution and hi

 6.5. Size:137K  international rectifier
irg4ph50u.pdf

IRG4PH50KDPBF
IRG4PH50KDPBF

PD - 91574BIRG4PH50UUltra Fast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighterVCE(on) typ. = 2.78VG parameter distribution and higher efficiency than previous gener

 6.6. Size:280K  infineon
auirg4ph50s.pdf

IRG4PH50KDPBF
IRG4PH50KDPBF

AUTOMOTIVE GRADEAUIRG4PH50SINSULATED GATE BIPOLAR TRANSISTORCVCES = 1200VFeaturesIC = 81A@ TC = 100C Standard: Optimized for minimum saturationGvoltage and low operating frequencies (

 6.7. Size:681K  infineon
irg4ph50udpbf.pdf

IRG4PH50KDPBF
IRG4PH50KDPBF

PD -95190IRG4PH50UDPbF UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 2.78V New IGBT design provides tighterG parameter distribution and higher efficiency than previous gener

 6.8. Size:137K  infineon
irg4ph50u.pdf

IRG4PH50KDPBF
IRG4PH50KDPBF

PD - 91574BIRG4PH50UUltra Fast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighterVCE(on) typ. = 2.78VG parameter distribution and higher efficiency than previous gener

Otros transistores... IRG4PC40FDPBF , IRG4PC50FPBF , IRG4PC50SDPBF , IRG4PC50UDPBF , IRG4PC50UPBF , IRG4PF50WPBF , IRG4PH30KPBF , IRG4PH40KDPBF , NGD8201N , IRG4PH50UDPBF , IRG4PSC71KDPBF , IRG7PH35UDPBF , IRG7PH35UD-EP , IRG7PH42UDPBF , IRGB4056DPBF , IRGB4620DPBF , IRGIB4620DPBF .

 

 
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