IRG7PH42UDPBF Todos los transistores

 

IRG7PH42UDPBF IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG7PH42UDPBF

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 320 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 85 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃

trⓘ - Tiempo de subida, typ: 32 nS

Coesⓘ - Capacitancia de salida, typ: 124 pF

Encapsulados: TO247

 Búsqueda de reemplazo de IRG7PH42UDPBF IGBT

- Selección ⓘ de transistores por parámetros

 

IRG7PH42UDPBF datasheet

 ..1. Size:1498K  international rectifier
irg7ph42udpbf.pdf pdf_icon

IRG7PH42UDPBF

 4.1. Size:435K  international rectifier
irg7ph42ud-ep.pdf pdf_icon

IRG7PH42UDPBF

PD - 97391B IRG7PH42UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH42UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA IC = 45A, TC = 100 C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diod

 4.2. Size:283K  international rectifier
irg7ph42ud1m.pdf pdf_icon

IRG7PH42UDPBF

IRG7PH42UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA IC = 45A, TC = 100 C Ultra-low VF Diode TJ(max) = 150 C 1300Vpk repetitive transient capacity G 100% of the parts tested for ILM VCE

 4.3. Size:435K  international rectifier
irg7ph42ud.pdf pdf_icon

IRG7PH42UDPBF

PD - 97391B IRG7PH42UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH42UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA IC = 45A, TC = 100 C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diod

Otros transistores... IRG4PF50WPBF , IRG4PH30KPBF , IRG4PH40KDPBF , IRG4PH50KDPBF , IRG4PH50UDPBF , IRG4PSC71KDPBF , IRG7PH35UDPBF , IRG7PH35UD-EP , CRG15T120BNR3S , IRGB4056DPBF , IRGB4620DPBF , IRGIB4620DPBF , IRGP4620DPBF , IRGS4620DPBF , IRGB4630DPBF , IRGIB4630DPBF , IRGP4630DPBF .

History: MG1775S-BN4MM

 

 

 


History: MG1775S-BN4MM

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE

 

 

 

Popular searches

2sa1360 | p60nf06 datasheet | 2sc4468 | ru6888r | 2sc1815y | ktc3964 | s9013 transistor equivalent | 60n60 mosfet

 

 

↑ Back to Top
.