IRG7PH42UDPBF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRG7PH42UDPBF
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 320 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 85 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 32 nS
Coesⓘ - Capacitancia de salida, typ: 124 pF
Qgⓘ - Carga total de la puerta, typ: 157 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IRG7PH42UDPBF - IGBT
IRG7PH42UDPBF Datasheet (PDF)
irg7ph42ud-ep.pdf
PD - 97391BIRG7PH42UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH42UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diod
irg7ph42ud1m.pdf
IRG7PH42UD1MPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C Ultra-low VF DiodeTJ(max) = 150C 1300Vpk repetitive transient capacityG 100% of the parts tested for ILM VCE
irg7ph42ud.pdf
PD - 97391BIRG7PH42UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH42UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diod
irg7ph42ud1.pdf
IRG7PH42UD1PbFIRG7PH42UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA I NOMINAL = 30A Ultra-low VF DiodeG 1300Vpk repetitive transient capacityTJ(max) = 150C 100% of the parts tested for IL
Otros transistores... IRG4PF50WPBF , IRG4PH30KPBF , IRG4PH40KDPBF , IRG4PH50KDPBF , IRG4PH50UDPBF , IRG4PSC71KDPBF , IRG7PH35UDPBF , IRG7PH35UD-EP , SGH80N60UFD , IRGB4056DPBF , IRGB4620DPBF , IRGIB4620DPBF , IRGP4620DPBF , IRGS4620DPBF , IRGB4630DPBF , IRGIB4630DPBF , IRGP4630DPBF .
Liste
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