IRGIB4630DPBF Todos los transistores

 ..1. Size:1323K  infineon
 irgb4630dpbf irgib4630dpbf irgp4630dpbf irgs4630dpbf.pdf

IR IGBT IRGB4630DPbF IRGIB4630DPbF IRGP4630D(-E)PbF IRGS4630DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 30A, TC =100 C tSC 5 s, TJ(max) = 175 C E C E E G C G C G VCE(ON) typ. = 1.65V @ IC = 18A IRGP4630DPbF IRGP4630D-EPbF IRGB4630DPbF TO-247AC TO-247AD TO-220AB C C Applications Indust

 7.1. Size:966K  infineon
 irgb4620dpbf irgib4620dpbf irgp4620dpbf irgs4620dpbf.pdf

IR IGBT IRGB4620DPbF IRGIB4620DPbF IRGP4620D(-E)PbF IRGS4620DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 20A, TC =100 C tSC 5 s, TJ(max) = 175 C E C E E G C G C G VCE(ON) typ. = 1.55V @ IC = 12A IRGP4620DPbF IRGP4620D-EPbF IRGB4620DPbF TO-247AC TO-247AD TO-220AB C C Applications Indust

 9.1. Size:282K  international rectifier
 irgib15b60kd1.pdf

PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. IC = 12A, TC=100 C Low Diode VF. 10 s Short Circuit Capability. G Square RBSOA. tsc > 10 s, TJ=150 C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coeffici

 9.2. Size:392K  international rectifier
 irgib10b60kd1p.pdf

 9.3. Size:277K  international rectifier
 irgib6b60kd.pdf

PD-94427D IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features IC = 6.0A, TC=90 C Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. G 10 s Short Circuit Capability. tsc > 10 s, TJ=175 C Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. E Positive VCE (on) Temperature Coeffici

 9.4. Size:382K  international rectifier
 irgib15b60kd1p.pdf

PD- 94914 IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. IC = 12A, TC=100 C Low Diode VF. 10 s Short Circuit Capability. G Square RBSOA. tsc > 10 s, TJ=150 C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coeffici

 9.5. Size:384K  international rectifier
 irgib10b60kd1.pdf

PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. IC = 10A, TC=100 C Low Diode VF. 10 s Short Circuit Capability. G Square RBSOA. tsc > 10 s, TJ=150 C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficie

 9.6. Size:439K  international rectifier
 irgib7b60kd.pdf

PD - 94620B IRGIB7B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. IC = 8.0A, TC=100 C 10 s Short Circuit Capability. G Square RBSOA. tsc > 10 s, TJ=150 C Positive VCE (on) Temperature Coefficient. E Maximum Junction Temperature rated at 175 C. VCE(on) typ. =