IRGB4062DPBF Todos los transistores

 ..1. Size:415K  international rectifier
 irgp4062dpbf irgb4062dpbf irgp4062d-epbf.pdf

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V Low VCE (ON) Trench IGBT Technology Low switching losses IC = 24A, TC = 100 C Maximum Junction temperature 175 C 5 S short circuit SOA G tSC 5 s, TJ(max) = 175 C Square RBSOA 100% of the parts tested for ILM E

 5.1. Size:434K  international rectifier
 irgb4062d.pdf

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V Low VCE (ON) Trench IGBT Technology Low switching losses IC = 24A, TC = 100 C Maximum Junction temperature 175 C 5 S short circuit SOA G tSC 5 s, TJ(max) = 175 C Square RBSOA 100% of the parts tested for ILM E

 5.2. Size:621K  international rectifier
 auirgb4062d auirgp4062d auirgp4062d-e.pdf

PD - 96353 AUIRGB4062D AUIRGP4062D AUIRGP4062D-E C INSULATED GATE BIPOLAR TRANSISTOR WITH VCES = 600V ULTRAFAST SOFT RECOVERY DIODE IC = 24A, TC = 100 C Features Low VCE (on) Trench IGBT Technology G tSC 5 s, TJ(max) = 175 C Low Switching Losses 5 s SCSOA E Square RBSOA VCE(on) typ. = 1.60V 100% of The Parts Tested for ILM n-channel Positive V

 5.3. Size:415K  international rectifier
 auirgb4062d1.pdf

AUIRGB4062D1 AUIRGS4062D1 AUTOMOTIVE GRADE AUIRGSL4062D1 INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5 s SCSOA G tSC 5 s, TJ(max) = 175 C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.