DGW40N120CTL Todos los transistores

 

DGW40N120CTL - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DGW40N120CTL
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 428
   Tensión máxima colector-emisor |Vce|, V: 1200
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 80
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.85
   Tensión máxima de puerta-umbral |VGE(th)|, V: 6.4
   Temperatura máxima de unión (Tj), ℃: 175
   Tiempo de subida (tr), typ, nS: 56
   Carga total de la puerta (Qg), typ, nC: 330
   Paquete / Cubierta: TO247

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DGW40N120CTL Datasheet (PDF)

 ..1. Size:503K  cn yangzhou yangjie elec
dgw40n120ctl.pdf

DGW40N120CTL DGW40N120CTL

RoHS DGW40N120CTL COMPLIANT IGBT Discrete V 1200 V CEI 40 A CV I =40ACE(SAT) C 1.85 V Applications Inverter for motor drive AC and DC servo drive amplifier Circuit Uninterruptible power supply Features High breakdown voltage to 1200V for improved reliability Maximum junction temperature 175 Positive temperature coefficient Incl

 3.1. Size:411K  cn yangzhou yangjie elec
dgw40n120cth.pdf

DGW40N120CTL DGW40N120CTL

RoHS DGW40N120CTH COMPLIANT IGBT Modules V 1200 V CEI 40 A CV I =40A 2.10 V CE(SAT) C Applications High frequency switching application Circuit Resonant converters Uninterruptible power supply Welding converters Features High breakdown voltage to 1200V for improved reliability Maximum junction temperature 175 Positive tem

 3.2. Size:391K  cn yangzhou yangjie elec
dgw40n120cth0.pdf

DGW40N120CTL DGW40N120CTL

RoHS DGW40N120CTH0 COMPLIANT IGBT Modules V 1200 V CEI 40 A CV I =40A 1.90 V CE(SAT) C Applications High frequency switching application Resonant converters Circuit Uninterruptible power supply Welding converters Features High breakdown voltage to 1200V for improved reliability Maximum junction temperature 175 Positive temp

 8.1. Size:398K  cn yangzhou yangjie elec
dgw40n65bth.pdf

DGW40N120CTL DGW40N120CTL

RoHS DGW40N65BTH COMPLIANT IGBT Discrete V 650 V CEI 40 A CV I = A 1.95 V CE(SAT) C 40 Applications High frequency switching application Medical applications Circuit Uninterruptible power supply Motion/servo control Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High rug

 8.2. Size:285K  cn yangzhou yangjie elec
dgw40n65ctl.pdf

DGW40N120CTL DGW40N120CTL

RoHS DGW40N65CTL COMPLIANT IGBT Modules V 650 V CEI 40 A CV I = A 1.80 V CE(SAT) C 40 Applications Inverter for motor drive AC and DC servo drive amplifier Circuit Uninterruptible power supply Motion/servo control Features High breakdown voltage to 650V for improved reliability Maximum junction temperature 175 Positive temp

 8.3. Size:406K  cn yangzhou yangjie elec
dgw40n65cth.pdf

DGW40N120CTL DGW40N120CTL

RoHS DGW40N65CTH COMPLIANT IGBT Discrete V 650 V CEI 40 A CV I = A 1.95 V CE(SAT) C 40 Applications High frequency switching application Medical applications Circuit Uninterruptible power supply Motion/servo control Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High rug

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , TGAN20N135FD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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