DGW40N120CTL Todos los transistores

 

DGW40N120CTL - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DGW40N120CTL
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 428 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.4 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 56 nS
   Qgⓘ - Carga total de la puerta, typ: 330 nC
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

DGW40N120CTL Datasheet (PDF)

 ..1. Size:503K  cn yangzhou yangjie elec
dgw40n120ctl.pdf pdf_icon

DGW40N120CTL

RoHS DGW40N120CTL COMPLIANT IGBT Discrete V 1200 V CEI 40 A CV I =40ACE(SAT) C 1.85 V Applications Inverter for motor drive AC and DC servo drive amplifier Circuit Uninterruptible power supply Features High breakdown voltage to 1200V for improved reliability Maximum junction temperature 175 Positive temperature coefficient Incl

 3.1. Size:391K  cn yangzhou yangjie elec
dgw40n120cth0.pdf pdf_icon

DGW40N120CTL

RoHS DGW40N120CTH0 COMPLIANT IGBT Modules V 1200 V CEI 40 A CV I =40A 1.90 V CE(SAT) C Applications High frequency switching application Resonant converters Circuit Uninterruptible power supply Welding converters Features High breakdown voltage to 1200V for improved reliability Maximum junction temperature 175 Positive temp

 3.2. Size:411K  cn yangzhou yangjie elec
dgw40n120cth.pdf pdf_icon

DGW40N120CTL

RoHS DGW40N120CTH COMPLIANT IGBT Modules V 1200 V CEI 40 A CV I =40A 2.10 V CE(SAT) C Applications High frequency switching application Circuit Resonant converters Uninterruptible power supply Welding converters Features High breakdown voltage to 1200V for improved reliability Maximum junction temperature 175 Positive tem

 8.1. Size:406K  cn yangzhou yangjie elec
dgw40n65cth.pdf pdf_icon

DGW40N120CTL

RoHS DGW40N65CTH COMPLIANT IGBT Discrete V 650 V CEI 40 A CV I = A 1.95 V CE(SAT) C 40 Applications High frequency switching application Medical applications Circuit Uninterruptible power supply Motion/servo control Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High rug

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top

 


DGW40N120CTL
  DGW40N120CTL
  DGW40N120CTL
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M

 

 

 
Back to Top

 

Popular searches

c3198 transistor | irfb3607pbf datasheet | 60n60 | 2n5485 equivalent | 2sa1941 | 2sc485 | 2sd287 | 2sd438

 


 
.