IXGH30N30 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGH30N30
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 200 W
|Vce|ⓘ - Tensión máxima colector-emisor: 300 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
Tjⓘ -
Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.6(max) V @25℃
trⓘ - Tiempo de subida, typ: 40 nS
Coesⓘ - Capacitancia de salida, typ: 210 pF
Encapsulados: TO247
Búsqueda de reemplazo de IXGH30N30 IGBT
- Selección ⓘ de transistores por parámetros
IXGH30N30 datasheet
..1. Size:50K ixys
ixgh30n30.pdf 
IXGH30N30 VCES = 300 V HiPerFASTTM IGBT IC25 = 60 A VCE(sat) = 1.6 V tfi = 180 ns Preliminary data TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C; RGE = 1 M 300 V C (TAB) G VGES Continuous 20 V C E VGEM Transient 30 V G = Gate, C = Collector, E = Emitter, TAB = Collector IC25 TC = 25 C 60 A IC90 TC = 90 C 30
7.1. Size:576K ixys
ixgh30n60b2.pdf
Advance Technical Data VCES = 600 V IXGH 30N60B2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60B2 VCE(sat)
7.2. Size:506K ixys
ixgh30n60b2d1.pdf
Advance Technical Data VCES = 600 V HiPerFASTTM IGBT IXGH 30N60B2D1 IC25 = 70 A IXGT 30N60B2D1 VCE(sat)
7.3. Size:583K ixys
ixgh30n60c2 ixgt30n60c2.pdf
VCES = 600 V IXGH 30N60C2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60C2 VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C (limited by leads) 70 A TO-247 (IXGH) IC110 TC =
7.4. Size:138K ixys
ixgh30n60bu1.pdf
HiPerFASTTM IGBT IXGH 30N60BU1 VCES = 600 V IXGT 30N60BU1 IC25 = 60 A with Diode VCE(sat) = 1.8 V Combi Pack tfi = 100 ns TO-268 (IXGT) G Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 600 V C (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V TO-247 AD VGEM Transient 30 V IC25 TC = 25 C60 A C (TAB) IC110 TC = 110 C30 A G ICM
7.5. Size:164K ixys
ixgh30n60c2d1 ixgt30n60c2d1.pdf
VCES = 600 V HiPerFASTTM IGBT IXGH 30N60C2D1 IC25 = 70 A IXGT 30N60C2D1 with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C (limited by leads) 70 A IC11
7.6. Size:215K ixys
ixgh30n60c3d1.pdf
GenX3TM 600V IGBTs VCES = 600V IXGH30N60C3D1 w/ Diode IC110 = 30A IXGT30N60C3D1 VCE(sat) 3.0V tfi(typ) = 47ns High-Speed PT IGBTs for 40-100 kHz Switching TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C (Tab) VGES Continuous 20 V VGEM Transient 30 V TO-247 (IXG
7.7. Size:181K ixys
ixgh30n120c3h1.pdf
Preliminary Technical Information VCES = 1200V GenX3TM 1200V IGBT IXGH30N120C3H1 IC100 = 24A VCE(sat) 4.2V High speed PT IGBTs for tfi(typ) = 42ns 10-50kHz Switching Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V G IC25 TC = 25 C 4
7.8. Size:209K ixys
ixgh30n120b3.pdf
VCES = 1200V GenX3TM 1200V IXGA30N120B3 IC110 = 30A IGBTs IXGP30N120B3 VCE(sat) 3.5V IXGH30N120B3 tfi(typ) = 204ns High-Speed Low-Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V TO-220 (IXGP) VGES Continuous 20 V VGEM Tra
7.9. Size:159K ixys
ixgh30n60c2d1.pdf
VCES = 600 V HiPerFASTTM IGBT IXGH 30N60C2D1 IC25 = 70 A IXGT 30N60C2D1 with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C (limited by leads) 70 A IC11
7.10. Size:580K ixys
ixgh30n60c2.pdf
VCES = 600 V IXGH 30N60C2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60C2 VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C (limited by leads) 70 A TO-247 (IXGH) IC110 TC =
7.11. Size:213K ixys
ixgh30n120b3d1.pdf
VCES = 1200V GenX3TM 1200V IGBT IXGH30N120B3D1 IC110 = 30A IXGT30N120B3D1 VCE(sat) 3.5V tfi(typ) = 204ns High speed Low Vsat PT IGBTs 3-20 kHz switching Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V G IC110 TC = 110 C30
7.12. Size:578K ixys
ixgh30n60b2 ixgt30n60b2.pdf
Advance Technical Data VCES = 600 V IXGH 30N60B2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60B2 VCE(sat)
7.13. Size:269K ixys
ixgh30n60c3.pdf
GenX3TM 600V VCES = 600V IXGA30N60C3 IGBTs IC110 = 30A IXGP30N60C3 VCE(sat) 3.0V IXGH30N60C3 tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V TO-220AB (IXGP) VGES Continuous 20 V
7.14. Size:112K ixys
ixgh30n60bd1.pdf
IXGH 30N60BD1 HiPerFASTTM IGBT VCES = 600 V IXGT 30N60BD1 IC25 = 60 A with Diode VCE(sat) = 1.8 V tfi(typ) = 100 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V E VGES Continuous 20 V C (TAB) VGEM Transient 30 V IC25 TC = 25 C60 A TO-247 AD (IXGH) IC90 TC = 90 C30 A ICM TC = 25 C, 1
7.15. Size:52K ixys
ixgh30n60b.pdf
IXGH30N60B VCES = 600 V HiPerFASTTM IGBT IXGT30N60B IC25 = 60 A VCE(sat) = 1.8 V tfi = 100 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V C (TAB) G C VGEM Transient 30 V E IC25 TC = 25 C60 A IC110 TC = 110 C30 A TO-268 (D3) ICM TC = 25 C, 1 ms 120 A (IXGT) SSOA
7.16. Size:278K ixys
ixgh30n60c3c1.pdf
GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3C1 w/ SiC Anti-Parallel IC110 = 30A IXGP30N60C3C1 Diode VCE(sat) 3.0V IXGH30N60C3C1 tfi(typ) = 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RG
7.17. Size:81K ixys
ixgh30n60b4.pdf
Preliminary Technical Information High-Gain IGBT VCES = 600V IXGH30N60B4 IC110 = 30A VCE(sat) 1.7V tfi(typ) = 88ns Medium-Speed PT Trench IGBT TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G VGES Continuous 20 V C Tab E VGEM Transient 30 V IC25 TC = 25 C 66 A G = Ga
7.18. Size:600K ixys
ixgh30n60b2d1 ixgt30n60b2d1.pdf
Advance Technical Data VCES = 600 V HiPerFASTTM IGBT IXGH 30N60B2D1 IC25 = 70 A IXGT 30N60B2D1 VCE(sat)
Otros transistores... IXGH25N100U1
, IXGH25N120
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, IXGH30N30S
, IXGH30N60B
, IXGH30N60BD1
, IXGH30N60BU1
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, IXGH31N60D1
, IXGH32N50B
, IXGH32N50BU1
.
