TGAN15S135FD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TGAN15S135FD datasheet

..1. Size:819K trinnotech
tgan15s135fd.pdf pdf_icon

TGAN15S135FD Reverse Conducting Field Stop Trench IGBT Features 1350V Reverse Conducting Field Stop Trench IGBT Technology Excellent EMI Behavior High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC Qualification E C G Applications Induction Hea

8.1. Size:1014K trinnotech
tgan15n120fdr.pdf pdf_icon

TGAN15N120FDR Field Stop Trench IGBT Features 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5 s RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark T

8.2. Size:982K trinnotech
tgan15n120nd.pdf pdf_icon

TGAN15N120ND NPT Trench IGBT Features 1200V NPT Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification E Applications C Induction Heating, Soft switching application G Device Package Marking Remark TGAN15N120ND TO-3PN TGAN15N120ND RoHS Absolute Maximum R

Otros transistores... DGW50N65BTH , DGW50N65CTH , DGW50N65CTL1 , DGW60N65BTH , DGW75N65CTL1 , ATGH40N120F2DR , TGAF40N60F2D , TGAN15N120FDR , RJP30H2A , TGAN20N135F3D , TGAN20N150FD , TGAN20S135FD , TGAN20S150FD , TGAN25N120FDR , TGAN30N135FD1 , TGAN30S135FD , TGAN30S160FD .