TGAN20S150FD Todos los transistores

 

TGAN20S150FD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TGAN20S150FD

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 230 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1500 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 25 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.05 V @25℃

Coesⓘ - Capacitancia de salida, typ: 42 pF

Encapsulados: TO3PN

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TGAN20S150FD datasheet

 ..1. Size:940K  trinnotech
tgan20s150fd.pdf pdf_icon

TGAN20S150FD

TGAN20S150FD Reverse Conducting Field Stop Trench IGBT Features TO 3PN 1500V Reverse Conducting Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC Qualification E C G Applications Induction Heating, Inverterize

 6.1. Size:910K  trinnotech
tgan20s135fd.pdf pdf_icon

TGAN20S150FD

TGAN20S135FD Reverse Conducting Field Stop Trench IGBT Features 1350V Reverse Conducting Field Stop Trench IGBT Technology Excellent EMI Behavior High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC Qualification E C Applications G Induction Heat

 8.1. Size:950K  trinnotech
tgan20n150fd.pdf pdf_icon

TGAN20S150FD

TGAN20N150FD Field Stop Trench IGBT Features TO 3PN 1500V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC Qualification E C G Applications Induction Heating, Inverterized Microwave Ovens, Soft Switching Appl

 8.2. Size:1118K  trinnotech
tgan20n120fd.pdf pdf_icon

TGAN20S150FD

TGAN20N120FD Field Stop Trench IGBT Features 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification E Applications C Induction Heating, Soft switching application G Device Package Marking Remark TGAN20N120FD TO-3PN TGAN20N120FD RoHS Abso

Otros transistores... DGW75N65CTL1 , ATGH40N120F2DR , TGAF40N60F2D , TGAN15N120FDR , TGAN15S135FD , TGAN20N135F3D , TGAN20N150FD , TGAN20S135FD , SGT40N60NPFDPN , TGAN25N120FDR , TGAN30N135FD1 , TGAN30S135FD , TGAN30S160FD , TGAN40N110FD , TGAN40N120F2D , TGAN40N120F2DW , TGAN40N120FDR .

History: SPT40N120F1A1 | STGB14NC60KD | STGWA40H65FB | VS-GB55NA120UX | SGM25PA12A8TFD | RJQ6008DPM | VS-GB600AH120N

 

 

 

 

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