TGAN40N110FD Todos los transistores

 

TGAN40N110FD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TGAN40N110FD

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 338 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1100 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 25 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

Coesⓘ - Capacitancia de salida, typ: 110 pF

Encapsulados: TO3PN

 Búsqueda de reemplazo de TGAN40N110FD IGBT

- Selección ⓘ de transistores por parámetros

 

TGAN40N110FD datasheet

 ..1. Size:938K  trinnotech
tgan40n110fd.pdf pdf_icon

TGAN40N110FD

TGAN40N110FD Field Stop Trench IGBT Features 1100V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications Induction Heating, Soft switching application Device Package Marking Remark TGAN40N110FD TO-3PN TGAN40N110FD RoHS Absolu

 6.1. Size:921K  trinnotech
tgan40n120f2d.pdf pdf_icon

TGAN40N110FD

TGAN40N120F2D Field Stop Trench IGBT Features 1200V Field Stop Trench Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN40N120F2D TO-3PN TGAN40N120F2D RoHS A

 6.2. Size:865K  trinnotech
tgan40n135fd.pdf pdf_icon

TGAN40N110FD

TGAN40N135FD Field Stop Trench IGBT Features 1350V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC Qualification E Applications C Induction Heating G Inverterized microwave ovens Soft Switching Applicat

 6.3. Size:866K  trinnotech
tgan40n120f2dw.pdf pdf_icon

TGAN40N110FD

TGAN40N120F2DW Field Stop Trench IGBT Features 1200V Field Stop Trench Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications Welder, UPS, Inverter, Solar Device Package Marking Remark TGAN40N120F2DW TO-3PN TGAN40N120F2DW RoHS Absolute Maximu

Otros transistores... TGAN20N135F3D , TGAN20N150FD , TGAN20S135FD , TGAN20S150FD , TGAN25N120FDR , TGAN30N135FD1 , TGAN30S135FD , TGAN30S160FD , FGA60N65SMD , TGAN40N120F2D , TGAN40N120F2DW , TGAN40N120FDR , TGAN40N135FD , TGAN40N60F2D , TGAN40N60F2DS , TGAN40N65F2DR , TGAN40N65F2DS .

History: TA49119 | NGTB40N65IHL2 | TA49048

 

 

 


History: TA49119 | NGTB40N65IHL2 | TA49048

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE

 

 

 

Popular searches

2sb688 | 2sd551 | ac128 datasheet | 2n5496 | 2sb600 | 2sa1209 | 2sc1364 replacement | 2sd665

 

 

↑ Back to Top
.