TGAN40N60F2DS Todos los transistores

 

TGAN40N60F2DS IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TGAN40N60F2DS

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 236 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 17 nS

Coesⓘ - Capacitancia de salida, typ: 135 pF

Encapsulados: TO3PN

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TGAN40N60F2DS datasheet

 ..1. Size:892K  trinnotech
tgan40n60f2ds.pdf pdf_icon

TGAN40N60F2DS

TGAN40N60F2DS Field Stop Trench IGBT Features 600V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E Applications C G UPS, Welder, Motor Inverter Device Package Marking Remark TGAN40N60F2DS TO-3PN TGAN40N60F2DS RoHS Absolute Maximum Ratings Parameter Symbol

 2.1. Size:882K  trinnotech
tgan40n60f2d.pdf pdf_icon

TGAN40N60F2DS

TGAN40N60F2D Field Stop Trench IGBT Features 600V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E Applications C G UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN40N60F2D TO-3PN TGAN40N60F2D RoHS Absolute Maximum Ratings Parameter Symbol Va

 4.1. Size:1095K  trinnotech
tgan40n60fd.pdf pdf_icon

TGAN40N60F2DS

TGAN40N60FD Field Stop Trench IGBT Features 600V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN40N60FD TO-3PN TGAN40N60FD RoHS Absolute Maximum Ratings

 6.1. Size:957K  trinnotech
tgan40n65f2ds.pdf pdf_icon

TGAN40N60F2DS

TGAN40N65F2DS Field Stop Trench IGBT Features 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating Temperature E C G Applications UPS, Inverter, Solar, Welder Device Package Marking Remark TGAN40N65F2DS TO-3PN

Otros transistores... TGAN30S135FD , TGAN30S160FD , TGAN40N110FD , TGAN40N120F2D , TGAN40N120F2DW , TGAN40N120FDR , TGAN40N135FD , TGAN40N60F2D , SGT60N60FD1P7 , TGAN40N65F2DR , TGAN40N65F2DS , TGAN40N90FD , TGAN40S135FD , TGAN40S160FD , TGAN50N90FD , TGAN60N60F2DS , TGAN60N65F2DR .

History: SPT40N120T1BT8TL | NGTB30N65IHL2WG | SPT25N135F1AT8TL | TT025N120FQ

 

 

 

 

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