TGAN40N60F2DS - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TGAN40N60F2DS
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 236
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 80
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2
Tensión máxima de puerta-umbral |VGE(th)|, V: 7.5
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 17
Capacitancia de salida (Cc), typ, pF: 135
Carga total de la puerta (Qg), typ, nC: 115
Paquete / Cubierta: TO3PN
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TGAN40N60F2DS Datasheet (PDF)
tgan40n60f2ds.pdf
TGAN40N60F2DSField Stop Trench IGBTFeatures 600V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationEApplications CGUPS, Welder, Motor InverterDevice Package Marking RemarkTGAN40N60F2DS TO-3PN TGAN40N60F2DS RoHSAbsolute Maximum Ratings Parameter Symbol
tgan40n60f2d.pdf
TGAN40N60F2DField Stop Trench IGBTFeatures 600V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationEApplications CGUPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAN40N60F2D TO-3PN TGAN40N60F2D RoHSAbsolute Maximum Ratings Parameter Symbol Va
tgan40n60fd.pdf
TGAN40N60FDField Stop Trench IGBTFeatures: 600V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplications :UPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAN40N60FD TO-3PN TGAN40N60FD RoHSAbsolute Maximum Ratings
tgan40n65f2ds.pdf
TGAN40N65F2DSField Stop Trench IGBTFeatures 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating TemperatureECGApplicationsUPS, Inverter, Solar, WelderDevice Package Marking RemarkTGAN40N65F2DS TO-3PN
tgan40n65f2dr.pdf
TGAN40N65F2DRField Stop Trench IGBTFeatures 650V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature Short Circuit Withstanding Time 5s RoHS Compliant JEDEC QualificationECGApplicationsUPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAN40N
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ