TGAN40N60F2DS Todos los transistores

 

TGAN40N60F2DS - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TGAN40N60F2DS
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 236 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 17 nS
   Coesⓘ - Capacitancia de salida, typ: 135 pF
   Qgⓘ - Carga total de la puerta, typ: 115 nC
   Paquete / Cubierta: TO3PN
 

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TGAN40N60F2DS Datasheet (PDF)

 ..1. Size:892K  trinnotech
 tgan40n60f2ds.pdf pdf_icon

TGAN40N60F2DS

TGAN40N60F2DSField Stop Trench IGBTFeatures 600V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationEApplications CGUPS, Welder, Motor InverterDevice Package Marking RemarkTGAN40N60F2DS TO-3PN TGAN40N60F2DS RoHSAbsolute Maximum Ratings Parameter Symbol

 2.1. Size:882K  trinnotech
 tgan40n60f2d.pdf pdf_icon

TGAN40N60F2DS

TGAN40N60F2DField Stop Trench IGBTFeatures 600V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationEApplications CGUPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAN40N60F2D TO-3PN TGAN40N60F2D RoHSAbsolute Maximum Ratings Parameter Symbol Va

 4.1. Size:1095K  trinnotech
 tgan40n60fd.pdf pdf_icon

TGAN40N60F2DS

TGAN40N60FDField Stop Trench IGBTFeatures: 600V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplications :UPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAN40N60FD TO-3PN TGAN40N60FD RoHSAbsolute Maximum Ratings

 6.1. Size:957K  trinnotech
 tgan40n65f2ds.pdf pdf_icon

TGAN40N60F2DS

TGAN40N65F2DSField Stop Trench IGBTFeatures 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating TemperatureECGApplicationsUPS, Inverter, Solar, WelderDevice Package Marking RemarkTGAN40N65F2DS TO-3PN

MOSTRAR MÁS

Otros transistores... TGAN30S135FD , TGAN30S160FD , TGAN40N110FD , TGAN40N120F2D , TGAN40N120F2DW , TGAN40N120FDR , TGAN40N135FD , TGAN40N60F2D , IRGP4086 , TGAN40N65F2DR , TGAN40N65F2DS , TGAN40N90FD , TGAN40S135FD , TGAN40S160FD , TGAN50N90FD , TGAN60N60F2DS , TGAN60N65F2DR .

 

 
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