TGAN40N90FD Todos los transistores

 

TGAN40N90FD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TGAN40N90FD

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 379 W

|Vce|ⓘ - Tensión máxima colector-emisor: 900 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 25 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 40 nS

Coesⓘ - Capacitancia de salida, typ: 90 pF

Encapsulados: TO3PN

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TGAN40N90FD datasheet

 ..1. Size:855K  trinnotech
tgan40n90fd.pdf pdf_icon

TGAN40N90FD

TGAN40N90FD Field Stop Trench IGBT Features 900V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications Induction Heating, Soft switching application Device Package Marking Remark TGAN40N90FD TO-3PN TGAN40N90FD RoHS Absolute M

 7.1. Size:1095K  trinnotech
tgan40n60fd.pdf pdf_icon

TGAN40N90FD

TGAN40N60FD Field Stop Trench IGBT Features 600V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN40N60FD TO-3PN TGAN40N60FD RoHS Absolute Maximum Ratings

 7.2. Size:921K  trinnotech
tgan40n120f2d.pdf pdf_icon

TGAN40N90FD

TGAN40N120F2D Field Stop Trench IGBT Features 1200V Field Stop Trench Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN40N120F2D TO-3PN TGAN40N120F2D RoHS A

 7.3. Size:882K  trinnotech
tgan40n60f2d.pdf pdf_icon

TGAN40N90FD

TGAN40N60F2D Field Stop Trench IGBT Features 600V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E Applications C G UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN40N60F2D TO-3PN TGAN40N60F2D RoHS Absolute Maximum Ratings Parameter Symbol Va

Otros transistores... TGAN40N120F2D , TGAN40N120F2DW , TGAN40N120FDR , TGAN40N135FD , TGAN40N60F2D , TGAN40N60F2DS , TGAN40N65F2DR , TGAN40N65F2DS , G50T65D , TGAN40S135FD , TGAN40S160FD , TGAN50N90FD , TGAN60N60F2DS , TGAN60N65F2DR , TGAN60N65F2DS , TGAN80N60F2DS , TGAN80N65F2DS .

History: TT025N120FQ | SPT25N135F1AT8TL | SPT40N120T1BT8TL | NGTB30N65IHL2WG

 

 

 


History: TT025N120FQ | SPT25N135F1AT8TL | SPT40N120T1BT8TL | NGTB30N65IHL2WG

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