TGAN40N90FD Todos los transistores

 

TGAN40N90FD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TGAN40N90FD
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 379 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 900 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 40 nS
   Coesⓘ - Capacitancia de salida, typ: 90 pF
   Qgⓘ - Carga total de la puerta, typ: 210 nC
   Paquete / Cubierta: TO3PN
 

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TGAN40N90FD Datasheet (PDF)

 ..1. Size:855K  trinnotech
tgan40n90fd.pdf pdf_icon

TGAN40N90FD

TGAN40N90FDField Stop Trench IGBTFeatures 900V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplicationsInduction Heating, Soft switching applicationDevice Package Marking RemarkTGAN40N90FD TO-3PN TGAN40N90FD RoHSAbsolute M

 7.1. Size:1095K  trinnotech
tgan40n60fd.pdf pdf_icon

TGAN40N90FD

TGAN40N60FDField Stop Trench IGBTFeatures: 600V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplications :UPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAN40N60FD TO-3PN TGAN40N60FD RoHSAbsolute Maximum Ratings

 7.2. Size:921K  trinnotech
tgan40n120f2d.pdf pdf_icon

TGAN40N90FD

TGAN40N120F2D Field Stop Trench IGBT Features 1200V Field Stop Trench Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN40N120F2D TO-3PN TGAN40N120F2D RoHS A

 7.3. Size:882K  trinnotech
tgan40n60f2d.pdf pdf_icon

TGAN40N90FD

TGAN40N60F2DField Stop Trench IGBTFeatures 600V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationEApplications CGUPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAN40N60F2D TO-3PN TGAN40N60F2D RoHSAbsolute Maximum Ratings Parameter Symbol Va

Otros transistores... TGAN40N120F2D , TGAN40N120F2DW , TGAN40N120FDR , TGAN40N135FD , TGAN40N60F2D , TGAN40N60F2DS , TGAN40N65F2DR , TGAN40N65F2DS , IRGP4063D , TGAN40S135FD , TGAN40S160FD , TGAN50N90FD , TGAN60N60F2DS , TGAN60N65F2DR , TGAN60N65F2DS , TGAN80N60F2DS , TGAN80N65F2DS .

 

 
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