TGAN40S135FD Todos los transistores

 

TGAN40S135FD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TGAN40S135FD
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 625 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1350 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 8 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   Coesⓘ - Capacitancia de salida, typ: 81 pF
   Qgⓘ - Carga total de la puerta, typ: 246 nC
   Paquete / Cubierta: TO3PN
 

 Búsqueda de reemplazo de TGAN40S135FD IGBT

   - Selección ⓘ de transistores por parámetros

 

TGAN40S135FD Datasheet (PDF)

 ..1. Size:947K  trinnotech
tgan40s135fd.pdf pdf_icon

TGAN40S135FD

TGAN40S135FDReverse Conducting Field Stop Trench IGBTFeatures 1350V Reverse Conducting Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC QualificationEApplicationsC Induction Heating G Inverterized microwa

 6.1. Size:965K  trinnotech
tgan40s160fd.pdf pdf_icon

TGAN40S135FD

TGAN40S160FDReverse Conducting Field Stop Trench IGBTFeatures 1600V Reverse Conducting Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC QualificationEApplicationsC Induction Heating G Inverterized microwa

 8.1. Size:855K  trinnotech
tgan40n90fd.pdf pdf_icon

TGAN40S135FD

TGAN40N90FDField Stop Trench IGBTFeatures 900V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplicationsInduction Heating, Soft switching applicationDevice Package Marking RemarkTGAN40N90FD TO-3PN TGAN40N90FD RoHSAbsolute M

 8.2. Size:1095K  trinnotech
tgan40n60fd.pdf pdf_icon

TGAN40S135FD

TGAN40N60FDField Stop Trench IGBTFeatures: 600V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplications :UPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAN40N60FD TO-3PN TGAN40N60FD RoHSAbsolute Maximum Ratings

Otros transistores... TGAN40N120F2DW , TGAN40N120FDR , TGAN40N135FD , TGAN40N60F2D , TGAN40N60F2DS , TGAN40N65F2DR , TGAN40N65F2DS , TGAN40N90FD , RJH3047 , TGAN40S160FD , TGAN50N90FD , TGAN60N60F2DS , TGAN60N65F2DR , TGAN60N65F2DS , TGAN80N60F2DS , TGAN80N65F2DS , TGH40N120F2DR .

 

 
Back to Top

 


TGAN40S135FD
  TGAN40S135FD
  TGAN40S135FD
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE

 

 

 
Back to Top

 

Popular searches

a1695 datasheet | 3415 transistor | 072ne6pt | 2sd388 | 2sc1400 | 2sd331 | 2sc1312 datasheet | 2sb647

 


 
.