TGAN60N65F2DS Todos los transistores

 

TGAN60N65F2DS IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TGAN60N65F2DS

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 428 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃

trⓘ - Tiempo de subida, typ: 45 nS

Coesⓘ - Capacitancia de salida, typ: 155 pF

Encapsulados: TO3PN

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TGAN60N65F2DS datasheet

 ..1. Size:818K  trinnotech
 tgan60n65f2ds.pdf pdf_icon

TGAN60N65F2DS

TGAN60N65F2DS Field Stop Trench IGBT Features 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating Temperature E C G Applications UPS, Inverter, Solar, Welder Device Package Marking Remark TGAN60N65F2DS TO-3PN

 2.1. Size:987K  trinnotech
 tgan60n65f2dr.pdf pdf_icon

TGAN60N65F2DS

TGAN60N65F2DR Field Stop Trench IGBT Features 650V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature Short Circuit Withstanding Time 5 s RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN60N

 6.1. Size:967K  trinnotech
 tgan60n60f2ds.pdf pdf_icon

TGAN60N65F2DS

TGAN60N60F2DS Field Stop Trench IGBT Features 600V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN60N60F2DS TO-3PN TGAN60N60F2DS RoHS Absolute Maxim

 6.2. Size:1102K  trinnotech
 tgan60n60fd.pdf pdf_icon

TGAN60N65F2DS

TGAN60N60FD Field Stop Trench IGBT Features 600V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications Induction Heating, Soft Switching Application, UPS, Welder, Inverter Device Package Marking Remark TGAN60N60FD TO-3PN TG

MOSTRAR MÁS

Otros transistores... TGAN40N65F2DR , TGAN40N65F2DS , TGAN40N90FD , TGAN40S135FD , TGAN40S160FD , TGAN50N90FD , TGAN60N60F2DS , TGAN60N65F2DR , RJH3047 , TGAN80N60F2DS , TGAN80N65F2DS , TGH40N120F2DR , TGH40N135FD , TGH40N60F2D , TGH40N65F2DR , TGH40N65F2DS , TGH60N65F2DR .

History: RJH60D3DPE | YGW15N120T3 | XP035PJE120AT1B2 | SGP15N60RUF | XD050H065CX1S3 | STGWT40H65DFB | STGWT40V60DLF

 

 

 

 

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