TGH40N65F2DS Todos los transistores

 

TGH40N65F2DS - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TGH40N65F2DS
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 283 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 38 nS
   Coesⓘ - Capacitancia de salida, typ: 128 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

TGH40N65F2DS Datasheet (PDF)

 ..1. Size:897K  trinnotech
 tgh40n65f2ds.pdf pdf_icon

TGH40N65F2DS

TGH40N65F2DSField Stop Trench IGBTFeaturesTO-247 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating TemperatureG C EApplications UPS, Inverter, Solar, WelderDevice Package Marking RemarkTGH40N65F2DS

 3.1. Size:888K  trinnotech
 tgh40n65f2dr.pdf pdf_icon

TGH40N65F2DS

TGH40N65F2DRField Stop Trench IGBTTO-247Features 650V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature Short Circuit Withstanding Time 5s RoHS Compliant JEDEC QualificationG C EApplicationsUPS, Welder, Inverter, SolarDevice Package Marking RemarkTG

 7.1. Size:882K  trinnotech
 tgh40n60f2d.pdf pdf_icon

TGH40N65F2DS

TGH40N60F2DField Stop Trench IGBTFeaturesTO-247 600V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationG C EApplicationsUPS, Welder, Inverter, SolarDevice Package Marking RemarkTGH40N60F2D TO-247 TGH40N60F2D RoHSAbsolute Maximum Ratings Parameter Symbo

 8.1. Size:934K  trinnotech
 tgh40n120f2dr.pdf pdf_icon

TGH40N65F2DS

TGH40N120F2DRField Stop Trench IGBTTO-247Features 1200V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature Short Circuit Withstanding Time 5s RoHS Compliant JEDEC QualificationG C EApplicationsUPS, Welder, Inverter, Solar, PTC H

MOSTRAR MÁS

Otros transistores... TGAN60N65F2DR , TGAN60N65F2DS , TGAN80N60F2DS , TGAN80N65F2DS , TGH40N120F2DR , TGH40N135FD , TGH40N60F2D , TGH40N65F2DR , YGW40N65F1 , TGH60N65F2DR , TGH60N65F2DS , HCKD5N65AM2 , HCKD5N65BM2 , HCKW25N120H2 , HCKW40N120BH1 , HCKW40N120CS2 , HCKW40N120H1 .

History: RJP4009ANS | MMG100J060U | DIM800DCS12-A | APTGF150A120T | SM2G75US120 | APTGF330SK60D3 | SL25T120FL

 

 
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