HCKW40N120BH1 Todos los transistores

 

HCKW40N120BH1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HCKW40N120BH1
   Tipo de transistor: IGBT + Diode
   Código de marcado: K40H120B1
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 484 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.4 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 78.9 nS
   Coesⓘ - Capacitancia de salida, typ: 186 pF
   Qgⓘ - Carga total de la puerta, typ: 268 nC
   Paquete / Cubierta: TO247

 Búsqueda de reemplazo de HCKW40N120BH1 - IGBT

 

HCKW40N120BH1 Datasheet (PDF)

 ..1. Size:1182K  cn vgsemi
hckw40n120bh1.pdf

HCKW40N120BH1
HCKW40N120BH1

HCKW40N120BH1@Trench-FS Cool-Watt IGBTHCKW40N120BH1 is a 1200V40A IGBT discrete with high speed soft switching ofTrench Field stop technology.The product with a anti-parallel diode,has the characteristics oflow V , high junction temperature and strong robustness. It is very suitable for productscesatwith high switching frequency. Features CoolWatt@ Trench-FS techn

 4.1. Size:7213K  cn vgsemi
hckw40n120cs2.pdf

HCKW40N120BH1
HCKW40N120BH1

HCKW40N120CS2@Trench-FS Cool-Watt IGBTHCKW40N120CS2 is a 1200V40A IGBT discrete with high speed soft switching ofTrench Field stop technology.The product with a anti-parallel diode,has the characteristics oflow V ,high junction temperature and strong robustness. It is very suitable for products withcesatmotor and fans driver. Features CoolWatt@ Trench-FS technolog

 4.2. Size:1180K  cn vgsemi
hckw40n120h1.pdf

HCKW40N120BH1
HCKW40N120BH1

HCKW40N120H1@Trench-FS Cool-Watt IGBTHCKW40N120H1 is a 1200V40A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV , high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS technol

 7.1. Size:6108K  cn vgsemi
hckw40n65h2.pdf

HCKW40N120BH1
HCKW40N120BH1

HCKW40N65H2@Trench-FS Cool-Watt IGBTHCKW40N65H2 is a 650V40A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV , high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS technology

Otros transistores... TGH40N60F2D , TGH40N65F2DR , TGH40N65F2DS , TGH60N65F2DR , TGH60N65F2DS , HCKD5N65AM2 , HCKD5N65BM2 , HCKW25N120H2 , RJH60F5DPQ-A0 , HCKW40N120CS2 , HCKW40N120H1 , MSG06T65FLD , MSG100D350FH , MSG100T100FLN , MSG100T100FQW , MSG100T120FQW , MSG15T120FQC .

 

 
Back to Top

 


HCKW40N120BH1
  HCKW40N120BH1
  HCKW40N120BH1
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2

 

 

 
Back to Top