MSG15T120HLC0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSG15T120HLC0
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 238
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 30
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.6
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 34
Capacitancia de salida (Cc), typ, pF: 78
Carga total de la puerta (Qg), typ, nC: 112
Paquete / Cubierta: TO247
Búsqueda de reemplazo de MSG15T120HLC0 - IGBT
MSG15T120HLC0 Datasheet (PDF)
msg15t120hlc0.pdf
MSG15T120HLC0Features Low gate charge Trench FS Technology RoHS productApplications General purpose inverters Induction heating(IH) UPSAbsolute RatingsTc=25Parameter Symbol Value UnitCollector-Emmiter Voltage V 1200 VCES30 AIc T=25*Collector Current-continuousT=10015 ACollector Current-pulse(note 1) I 45 ACM30Diode Conti
msg15t120fpc.pdf
MSG15T120FPCFeatures Low gate charge FS Technology saturation voltage:VCE(sat), typ = 2.2V @IC = 15A and TC = 25C RoHS productApplications General purpose inverters Induction heating(IH) UPSAbsolute RatingsTc=25Parameter Symbol Value UnitCollector-Emmiter Voltage V 1200 VCES30 AIc T=25*Collector Current-continuousT=100
msg15t120fqc.pdf
MSG15T120FQCN-Channel IGBTFeatures Low gate charge FS Technology Short circuit withstand time 10 uS Saturation voltage:VCE(sat),typ=1.8V@IC=15A and TC=25Applications General purpose inverter Induction heating(IH) UPSOrder MessageOrder codes Marking PackageMSG15T120FQC MSG15T120FQC TO-247Absolute Ratings(Tc=25)ValueParameter Symbol Uni
msg15t120fpc msg15t120fpe.pdf
MSG15T120FPC/EFeatures Low gate charge FS Technology saturation voltage:VCE(sat), typ = 2.2V @IC = 15A and TC = 25C RoHS productApplications General purpose inverters Induction heating(IH) UPSAbsolute RatingsTc=25Parameter Symbol Value UnitCollector-Emmiter Voltage V 1200 VCES30 AIc T=25*Collector Current-continuousT=100
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ