MSG20T65HPC0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSG20T65HPC0
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 162
Tensión máxima colector-emisor |Vce|, V: 650
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 40
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.6
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 56
Capacitancia de salida (Cc), typ, pF: 128
Carga total de la puerta (Qg), typ, nC: 43.9
Paquete / Cubierta: TO247
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MSG20T65HPC0 Datasheet (PDF)
msg20t65hpc0 msg20t65hpe0 msg20t65hpt1.pdf
MSG20T65HPC0/E0/T1Features Low gate charge Trench FS Technology, saturation voltage: V ,CE(sat)typ =1.6V,IC=20A and TC =25C RoHS productApplications General purpose inverters UPSAbsolute RatingsTc=25Parameter Symbol Typ UnitCollector-Emmiter Voltage Vces 650 V40 AIc T=25Collector Current-continuousT=10020 ACollector Curren
msg20t65fle.pdf
MSG20T65FLE650V Field stop Trench IGBTFeatures High Speed Switching & Low Power Loss High Input Impedance VCE(sat) = 1.6V @ IC = 20A High Input Impedance Short circuit withstand time 10 sApplications PFC UPS InverterAbsolute Maximum RatingsParameter Symbol Value UnitCollector-emitter voltage V 650CESVGate-emitter voltage V 30G
msg20t65fqs msg20t65fqt msg20t65fqe msg20t65fqc.pdf
MSG20T65FQS/TMSG20T65FQE/CFeatures Low gate charge Trench FS Technology, saturation voltage: V ,CE(sat)typ =1.6V,IC=20A and TC =25C RoHS productApplications General purpose inverters UPSAbsolute RatingsTc=25MSG20T MSG20T65FQT/ MSG20Parameter Symbol Unit65FQS MSG20T65FQE T65FQCCollector-Emmiter Voltage Vces 650 V40 AIc T=25Col
msg20t65fqs msg20t65fqt msg20t65fqc.pdf
MSG20T65FQS/T/CFeatures Low gate charge Trench FS Technology, saturation voltage: V ,CE(sat)typ =1.6V,IC=20A and TC =25C RoHS productApplications General purpose inverters UPSAbsolute RatingsTc=25MSG2 MSG2 MSG2Parameter Symbol 0T65F 0T65F 0T65F UnitQS QT QCCollector-Emmiter Voltage Vces 650 V40 AIc T=25Collector Current-continu
Otros transistores... MSG100T120FQW , MSG15T120FQC , MSG15T120HLC0 , MSG15T65FQT , MSG15T65FQE , MSG20T120FQC , MSG20T65FLE , MSG20T65FQE , JT075N065WED , MSG20T65HPE0 , MSG20T65HPT1 , MSG25T120FL , MSG25T120FPC , MSG25T120FQC , MSG30D120FLB , MSG30T65FHS , MSG30T65FHT .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ