IXGH31N60D1 Todos los transistores

Ultra-Low VCE(sat) IXGH 31N60D1 VCES = 600 V IGBT with Diode IXGT 31N60D1 IC25 = 60 A VCE(sat) = 1.7 V Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V TO-247 AD IC25 TC = 25 C60 A (IXGH) IC90 TC = 90 C31 A ICM TC = 25 C, 1

Ultra-Low VCE(sat) IGBT IXGH 31N60 VCES = 600 V IXGT 31N60 IC25 = 60 A VCE(sat) = 1.7 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C60 A TO-268 IC90 TC = 90 C31 A ICM TC = 25 C, 1 ms 80 A G SSOA VGE= 15 V, TVJ = 125 C, RG = 1

IXGH 32N170A VCES = 1700 V High Voltage IXGT 32N170A IC25 = 32 A IGBT VCE(sat) = 5.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C32 A TO-247 AD (IXGH) IC90 TC = 90 C21 A ICM TC = 25 C, 1 ms 110 A

Advance Technical Data VCES = 600 V IXGH 30N60B2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60B2 VCE(sat)

Advance Technical Data VCES = 600 V HiPerFASTTM IGBT IXGH 30N60B2D1 IC25 = 70 A IXGT 30N60B2D1 VCE(sat)

Ultra-Low VCE(sat) IGBT IXGH 38N60 VCES = 600 V IC25 = 76 A VCE(sat) = 1.8 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C76 A G = Gate, C = Collector, IC90 TC = 90 C38 A E = Emitter, TAB = Collector ICM TC = 25 C, 1 ms 152 A SSOA

VCES = 600 V IXGH 30N60C2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60C2 VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C (limited by leads) 70 A TO-247 (IXGH) IC110 TC =

Advance Technical Information IXGH 35N120C VCES = 1200 V IGBT IXGT 35N120C IC25 = 70 A VCE(sat) = 4.0 V Lightspeed Series tfi(typ) = 115 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V G E VGES Continuous 20 V (TAB) VGEM Transient 30 V IC25 TC = 25 C70 A TO-247 AD (IXGH) IC90 TC = 90 C3

HiPerFASTTM IGBT IXGH 30N60BU1 VCES = 600 V IXGT 30N60BU1 IC25 = 60 A with Diode VCE(sat) = 1.8 V Combi Pack tfi = 100 ns TO-268 (IXGT) G Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 600 V C (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V TO-247 AD VGEM Transient 30 V IC25 TC = 25 C60 A C (TAB) IC110 TC = 110 C30 A G ICM

High Voltage IXGH 32N170 VCES = 1700 V IXGT 32N170 IC25 = 75 A IGBT VCE(sat) = 3.3 V tfi(typ) = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C75 A TO-247 AD (IXGH) IC90 TC = 90 C32 A ICM TC

Advance Technical Information IXGH 35N120B VCES = 1200 V HiPerFASTTM IGBT IXGT 35N120B IC2 = 70 A VCE(sat) = 3.3 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V G E VGES Continuous 20 V C (TAB) VGEM Transient 30 V IC25 TC = 25 C70 A TO-247 AD (IXGH) IC90 TC = 90 C35 A I

Advance Technical Information VCES = 900 V IXGH 32N90B2D1 HiPerFASTTM IGBT IC25 = 64 A IXGT 32N90B2D1 with Fast Diode VCE(sat) = 2.7 V tfi typ = 150 ns B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 900 V C (TAB) VGES Continuous 20 V G C VGEM Transient

VCES = 600 V HiPerFASTTM IGBT IXGH 30N60C2D1 IC25 = 70 A IXGT 30N60C2D1 with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C (limited by leads) 70 A IC11

GenX3TM 600V IGBTs VCES = 600V IXGH30N60C3D1 w/ Diode IC110 = 30A IXGT30N60C3D1 VCE(sat) 3.0V tfi(typ) = 47ns High-Speed PT IGBTs for 40-100 kHz Switching TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C (Tab) VGES Continuous 20 V VGEM Transient 30 V TO-247 (IXG

IXGH 32N60AU1 IXGH 32N60AU1S VCES = 600 V IC25 = 60 A HiPerFASTTM IGBT with Diode VCE(sat) = 2.9V Combi Pack tfi = 125 ns TO-247 SMD (32N60AU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G C (TAB) E VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V TO-247 AD VGEM Transient 30 V IC25 TC = 25 C60 A IC90 TC = 90 C32 A C (TAB)

Preliminary Technical Information VCES = 1200V GenX3TM 1200V IGBT IXGH30N120C3H1 IC100 = 24A VCE(sat) 4.2V High speed PT IGBTs for tfi(typ) = 42ns 10-50kHz Switching Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V G IC25 TC = 25 C 4

IXGH 32N60A IXGH 32N60AS VCES = 600 V IC25 = 60 A HiPerFASTTM IGBT VCE(sat) = 2.9 V tfi = 125 ns TO-247 SMD (32N60AS) Symbol Test Conditions Maximum Ratings C (TAB) VCES TJ = 25 C to 150 C 600 V G E VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V TO-247 AD VGEM Transient 30 V IC25 TC = 25 C60 A IC90 TC = 90 C32 A C (TAB) G ICM TC = 25 C, 1 ms 120

VCES = 1200V GenX3TM 1200V IXGA30N120B3 IC110 = 30A IGBTs IXGP30N120B3 VCE(sat) 3.5V IXGH30N120B3 tfi(typ) = 204ns High-Speed Low-Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V TO-220 (IXGP) VGES Continuous 20 V VGEM Tra

GenX3TM 1200V VCES = 1200V IXGH32N120A3 IGBTs IC110 = 32A IXGT32N120A3 VCE(sat) 2.35V Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V E VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V C (Tab) VGES Continuous 20 V TO-247 (IXGH) VGEM Transient 30 V IC25 TC = 25 C 75

IXGH 32N170A VCES = 1700 V High Voltage IXGT 32N170A IC25 = 32 A IGBT VCE(sat) = 5.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C32 A TO-247 AD (IXGH) IC90 TC = 90 C21 A ICM TC = 25 C, 1 ms 110 A

IXGH30N30 VCES = 300 V HiPerFASTTM IGBT IC25 = 60 A VCE(sat) = 1.6 V tfi = 180 ns Preliminary data TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C; RGE = 1 M 300 V C (TAB) G VGES Continuous 20 V C E VGEM Transient 30 V G = Gate, C = Collector, E = Emitter, TAB = Collector IC25 TC = 25 C 60 A IC90 TC = 90 C 30

VCES = 600 V HiPerFASTTM IGBT IXGH 30N60C2D1 IC25 = 70 A IXGT 30N60C2D1 with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C (limited by leads) 70 A IC11

VCES = 600 V IXGH 30N60C2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60C2 VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C (limited by leads) 70 A TO-247 (IXGH) IC110 TC =

VCES = 1200V GenX3TM 1200V IGBT IXGH30N120B3D1 IC110 = 30A IXGT30N120B3D1 VCE(sat) 3.5V tfi(typ) = 204ns High speed Low Vsat PT IGBTs 3-20 kHz switching Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V G IC110 TC = 110 C30

IXGH 32N60C VCES = 600 V HiPerFASTTM IGBT IXGT 32N60C IC25 = 60 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 55 ns TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C60 A TO-247 AD (IXGH) IC110 TC = 110 C32 A ICM TC =

HiPerFASTTM IGBT IXGH39N60B VCES = 600 V IXGH39N60BD1 IC25 = 76 A IXGT39N60B VCE(sat) = 1.7 V IXGT39N60BD1 tfi = 200 ns Preliminary data (D1) TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25 C76 A IC90 TC =

Advance Technical Information IXGH 32N90B2 VCES = 900 V HiPerFASTTM IGBT IXGT 32N90B2 IC25 = 64 A B2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 150 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 M 900 V C (TAB) VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25 C (limited by leads)

Advance Technical Data VCES = 600 V IXGH 30N60B2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60B2 VCE(sat)

VCES = 600V GenX3TM 600V IGBT IXGH36N60B3D4 IC110 = 36A VCE(sat) 1.8V Medium speed low Vsat PT IGBT for 5-40kHz switching TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G TAB C VGEM Transient 30 V E IC110 TC = 110 C 36 A IF110 TC = 110 C 10 A

Advance Technical Information IXGH32N100A3 VCES = 1000V GenX3TM 1000V IGBT IXGT32N100A3 IC25 = 75A VCE(sat) 2.2V Ultra-low Vsat PT IGBTs for up to 4 kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1000 V G C (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 1000 V C E VGES Continuous 20 V TO-268 (

GenX3TM 600V VCES = 600V IXGA30N60C3 IGBTs IC110 = 30A IXGP30N60C3 VCE(sat) 3.0V IXGH30N60C3 tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V TO-220AB (IXGP) VGES Continuous 20 V

IXGH 32N60CD1 VCES = 600 V HiPerFASTTM IGBT IXGT 32N60CD1 IC25 = 60 A with Diode VCE(SAT)typ = 2.1 V tfi(typ) = 55 ns Light Speed Series TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G VGES Continuous 20 V C (TAB) C VGEM Transient 30 V E IC25 TC = 25 C60 A IC90 TC = 90 C32 A TO-268 (D

Advance Technical Information GenX3TM 600V IGBT VCES = 600V IXGH36N60B3 IC110 = 36A VCE(sat) 1.8V Medium-Speed Low-Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C Tab E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C 92 A

Preliminary Technical Information GenX3TM 600V IGBT VCES = 600V IXGH36N60B3C1 w/ SiC Anti-Parallel IC110 = 36A Diode VCE(sat) 1.8V tfi(typ) = 100ns Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C E VGES Continuous 20

Preliminary Technical Information IXGA36N60A3 VCES = 600V GenX3TM 600V IGBT IXGP36N60A3 IC110 = 36A IXGH36N60A3 VCE(sat) 1.4V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings E (TAB) VCES TC = 25 C to 150 C 600 V TO-220 (IXGP) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGE

Advance Technical Information IXGH 35N120B VCES = 1200 V HiPerFASTTM IGBT IXGT 35N120B IC2 = 70 A VCE(sat) = 3.3 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V G E VGES Continuous 20 V C (TAB) VGEM Transient 30 V IC25 TC = 25 C70 A TO-247 AD (IXGH) IC90 TC = 90 C35 A I

IXGH 30N60BD1 HiPerFASTTM IGBT VCES = 600 V IXGT 30N60BD1 IC25 = 60 A with Diode VCE(sat) = 1.8 V tfi(typ) = 100 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V E VGES Continuous 20 V C (TAB) VGEM Transient 30 V IC25 TC = 25 C60 A TO-247 AD (IXGH) IC90 TC = 90 C30 A ICM TC = 25 C, 1

IXGH 32N60B HiPerFASTTM IGBT VCES = 600 V IXGT 32N60B IC25 = 60 A IXGH 32N60BD1 VCE(sat) = 2.3 V IXGT 32N60BD1 tfi(typ) = 85 ns (D1) Symbol Test Conditions Maximum Ratings TO-268 (IXGT) G VCES TJ = 25 C to 150 C 600 V E C VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) VGES Continuous 20 V TO-247 AD VGEM Transient 30 V (IXGH) IC25 TC = 25 C60 A IC90 TC = 90 C3

IXGH30N60B VCES = 600 V HiPerFASTTM IGBT IXGT30N60B IC25 = 60 A VCE(sat) = 1.8 V tfi = 100 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V C (TAB) G C VGEM Transient 30 V E IC25 TC = 25 C60 A IC110 TC = 110 C30 A TO-268 (D3) ICM TC = 25 C, 1 ms 120 A (IXGT) SSOA

Preliminary Technical Information VCES = 600V GenX3TM 600V IGBT IXGH36N60A3D4 with Diode IC110 = 36A VCE(sat) 1.4V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) E IC1

GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3C1 w/ SiC Anti-Parallel IC110 = 30A IXGP30N60C3C1 Diode VCE(sat) 3.0V IXGH30N60C3C1 tfi(typ) = 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RG

High Voltage IXGH 32N170 VCES = 1700 V IXGT 32N170 IC25 = 75 A IGBT VCE(sat) = 3.3 V tfi(typ) = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C75 A TO-247 AD (IXGH) IC90 TC = 90 C32 A ICM TC

Advance Technical Data VCES = 600 V IXGH 34N60B2 HiPerFASTTM IGBT IC25 = 70 A VCE(sat)

GenX3TM 600V IGBT VCES = 600V IXGH36N60B3D1 w/ Diode IC110 = 36A VCE(sat) 1.8V Medium-Speed Low-Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V IC110 TC = 110 C 36 A G = Gate C = Col

Advance Technical Information VCES = 900 V IXGH 32N90B2D1 HiPerFASTTM IGBT IC25 = 64 A IXGT 32N90B2D1 with Fast Diode VCE(sat) = 2.7 V tfi typ = 150 ns B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 900 V C (TAB) VGES Continuous 20 V G C VGEM Transient

Advance Technical Information IXGH 32N90B2 VCES = 900 V HiPerFASTTM IGBT IXGT 32N90B2 IC25 = 64 A B2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 150 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 M 900 V C (TAB) VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25 C (limited by leads)

IXGH 32N60BU1 VCES = 600 V HiPerFASTTM IGBT IC25 = 60 A with Diode VCE(sat) = 2.3 V tfi = 80 ns Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E G = Gate, C = Collector, IC25 TC = 25 C60 A E = Emitter, TAB = Collector IC90 TC = 90 C32 A IC

HiPerFASTTM IGBT IXGH39N60B VCES = 600 V IXGH39N60BD1 IC25 = 76 A IXGT39N60B VCE(sat) = 1.7 V IXGT39N60BD1 tfi = 200 ns Preliminary data (D1) TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25 C76 A IC90 TC =

Preliminary Technical Information High-Gain IGBT VCES = 600V IXGH30N60B4 IC110 = 30A VCE(sat) 1.7V tfi(typ) = 88ns Medium-Speed PT Trench IGBT TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G VGES Continuous 20 V C Tab E VGEM Transient 30 V IC25 TC = 25 C 66 A G = Ga

Advance Technical Data VCES = 600 V HiPerFASTTM IGBT IXGH 30N60B2D1 IC25 = 70 A IXGT 30N60B2D1 VCE(sat)

HiPerFASTTM IGBT IXGH32N60B VCES = 600 V IC25 = 60 A VCE(sat) = 2.5 V tfi = 80 ns Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V C (TAB) VGEM Transient 30 V G C IC25 TC = 25 C60 A E IC90 TC = 90 C32 A G = Gate, C = Collector, ICM TC = 25 C, 1 ms 120 A E = Emitter, TAB = Col

IXGH 32N60A IXGH 32N60AS VCES = 600 V IC25 = 60 A HiPerFASTTM IGBT VCE(sat) = 2.9 V tfi = 125 ns TO-247 SMD (32N60AS) Symbol Test Conditions Maximum Ratings C (TAB) VCES TJ = 25 C to 150 C 600 V G E VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V TO-247 AD VGEM Transient 30 V IC25 TC = 25 C60 A IC90 TC = 90 C32 A C (TAB) G ICM TC = 25 C, 1 ms 120