MSG40T120FHW Todos los transistores

 

MSG40T120FHW IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MSG40T120FHW

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 320 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃

trⓘ - Tiempo de subida, typ: 81 nS

Coesⓘ - Capacitancia de salida, typ: 200 pF

Encapsulados: TO264

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MSG40T120FHW datasheet

 ..1. Size:1718K  cn maspower
 msg40t120fh msg40t120fhw.pdf pdf_icon

MSG40T120FHW

MSG40T120FH/FHW High speed Trench Fieldstop IGBT General Description Features This IGBT is produced using advanced trench High Speed Switching fieldstop IGBT technology, which provides low Positive Temperature coefficient for easy V , high switching performance paralleling CE(sat) and excellent quality. High ruggedness&good thermal stability Including fast free-wheelin

 3.1. Size:3086K  cn maspower
 msg40t120fh.pdf pdf_icon

MSG40T120FHW

MSG40T120FH High speed Trench Fieldstop IGBT General Description Features This IGBT is produced using advanced trench High Speed Switching fieldstop IGBT technology, which provides low Positive Temperature coefficient for easy V , high switching performance and paralleling CE(sat) excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod

 4.1. Size:1479K  cn maspower
 msg40t120fl.pdf pdf_icon

MSG40T120FHW

MSG40T120FL High speed Trench Fieldstop IGBT General Description Features This IGBT is produced using advanced trench High Speed Switching fieldstop IGBT technology, which provides low Positive Temperature coefficient for easy V , high switching performance and paralleling CE(sat) excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod

 4.2. Size:6609K  cn maspower
 msg40t120fqc.pdf pdf_icon

MSG40T120FHW

MSG40T120FQC Features Low gate charge. Trench FS Technology Saturation Voltage VCE(sat) = 1.8V @ IC = 40 A RoHS Complaint Applications General purpose inverters UPS Absolute Maximum Ratings Parameter Symbol Value Unit Collector to Emitter Voltage V 1200 CES V Gate to Emitter Voltage V 20 GES Turn-off safe area - 160 A T =25 80 C Collector Curren

MOSTRAR MÁS

Otros transistores... MSG25T120FL , MSG25T120FPC , MSG25T120FQC , MSG30D120FLB , MSG30T65FHS , MSG30T65FHT , MSG30T65FLT , MSG40T120FH , MBQ40T65FDSC , MSG40T120FL , MSG40T120FQC , MSG40T65FFC , MSG40T65FH , MSG40T65FHC , MSG40T65HPC0 , MSG40T65HPE0 , MSG50N350FQC .

 

 

 

 

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