MSG40T120FQC Todos los transistores

 ..1. Size:6609K  cn maspower
 msg40t120fqc.pdf

MSG40T120FQC Features Low gate charge. Trench FS Technology Saturation Voltage VCE(sat) = 1.8V @ IC = 40 A RoHS Complaint Applications General purpose inverters UPS Absolute Maximum Ratings Parameter Symbol Value Unit Collector to Emitter Voltage V 1200 CES V Gate to Emitter Voltage V 20 GES Turn-off safe area - 160 A T =25 80 C Collector Curren

 4.1. Size:3086K  cn maspower
 msg40t120fh.pdf

MSG40T120FH High speed Trench Fieldstop IGBT General Description Features This IGBT is produced using advanced trench High Speed Switching fieldstop IGBT technology, which provides low Positive Temperature coefficient for easy V , high switching performance and paralleling CE(sat) excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod

 4.2. Size:1718K  cn maspower
 msg40t120fh msg40t120fhw.pdf

MSG40T120FH/FHW High speed Trench Fieldstop IGBT General Description Features This IGBT is produced using advanced trench High Speed Switching fieldstop IGBT technology, which provides low Positive Temperature coefficient for easy V , high switching performance paralleling CE(sat) and excellent quality. High ruggedness&good thermal stability Including fast free-wheelin

 4.3. Size:1479K  cn maspower
 msg40t120fl.pdf

MSG40T120FL High speed Trench Fieldstop IGBT General Description Features This IGBT is produced using advanced trench High Speed Switching fieldstop IGBT technology, which provides low Positive Temperature coefficient for easy V , high switching performance and paralleling CE(sat) excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod