IXGH32N50B Todos los transistores

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IXGH32N50B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGH32N50B

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 500V

Voltaje de saturación colector-emisor (Vce sat):

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 60A

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 80

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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IXGH32N50B Datasheet (PDF)

3.1. ixgh32n90b2 ixgt32n90b2.pdf Size:202K _ixys

IXGH32N50B
IXGH32N50B

Advance Technical Information IXGH 32N90B2 VCES = 900 V HiPerFASTTM IGBT IXGT 32N90B2 IC25 = 64 A B2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 150 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25C to 150C 900 V VCGR TJ = 25C to 150C; RGE = 1 M? 900 V C (TAB) VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25C (limited by leads) 64 A TO-26

3.2. ixgh32n170a ixgt32n170a.pdf Size:572K _ixys

IXGH32N50B
IXGH32N50B

IXGH 32N170A VCES = 1700 V High Voltage IXGT 32N170A IC25 = 32 A IGBT VCE(sat) = 5.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C; RGE = 1 M? 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25C32 A TO-247 AD (IXGH) IC90 TC = 90C21 A ICM TC = 25C, 1 ms 110 A SSOA VGE = 15

3.3. ixgh32n90b2d1 ixgt32n90b2d1.pdf Size:219K _ixys

IXGH32N50B
IXGH32N50B

Advance Technical Information VCES = 900 V IXGH 32N90B2D1 HiPerFASTTM IGBT IC25 = 64 A IXGT 32N90B2D1 with Fast Diode VCE(sat) = 2.7 V tfi typ = 150 ns B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25C to 150C 900 V VCGR TJ = 25C to 150C; RGE = 1 MW 900 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E

3.4. ixgh32n170 ixgt32n170.pdf Size:577K _ixys

IXGH32N50B
IXGH32N50B

High Voltage IXGH 32N170 VCES = 1700 V IXGT 32N170 IC25 = 75 A IGBT VCE(sat) = 3.3 V tfi(typ) = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C; RGE = 1 M? 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25C75 A TO-247 AD (IXGH) IC90 TC = 90C32 A ICM TC = 25C, 1 ms

3.5. ixgh32n60c.pdf Size:81K _igbt

IXGH32N50B
IXGH32N50B

IXGH 32N60C VCES = 600 V HiPerFASTTM IGBT IXGT 32N60C IC25 = 60 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 55 ns TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C60 A TO-247 AD (IXGH) IC110 TC = 110°C32 A ICM TC =

3.6. ixgh32n60a.pdf Size:125K _igbt

IXGH32N50B
IXGH32N50B

IXGH 32N60B HiPerFASTTM IGBT VCES = 600 V IXGT 32N60B IC25 = 60 A IXGH 32N60BD1 VCE(sat) = 2.3 V IXGT 32N60BD1 tfi(typ) = 85 ns (D1) Symbol Test Conditions Maximum Ratings TO-268 (IXGT) G VCES TJ = 25°C to 150°C 600 V E C VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V (TAB) VGES Continuous ±20 V TO-247 AD VGEM Transient ±30 V (IXGH) IC25 TC = 25°C60 A IC90 TC = 90°C3

3.7. ixgh32n170a.pdf Size:569K _igbt

IXGH32N50B
IXGH32N50B

IXGH 32N170A VCES = 1700 V High Voltage IXGT 32N170A IC25 = 32 A IGBT VCE(sat) = 5.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C32 A TO-247 AD (IXGH) IC90 TC = 90°C21 A ICM TC = 25°C, 1 ms 110 A

3.8. ixgh32n90b2d1.pdf Size:217K _igbt

IXGH32N50B
IXGH32N50B

Advance Technical Information VCES = 900 V IXGH 32N90B2D1 HiPerFASTTM IGBT IC25 = 64 A IXGT 32N90B2D1 with Fast Diode VCE(sat) = 2.7 V tfi typ = 150 ns B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 900 V C (TAB) VGES Continuous ±20 V G C VGEM Transient

3.9. ixgh32n60bu1.pdf Size:137K _igbt

IXGH32N50B
IXGH32N50B

IXGH 32N60BU1 VCES = 600 V HiPerFASTTM IGBT IC25 = 60 A with Diode VCE(sat) = 2.3 V tfi = 80 ns Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E G = Gate, C = Collector, IC25 TC = 25°C60 A E = Emitter, TAB = Collector IC90 TC = 90°C32 A IC

3.10. ixgh32n170.pdf Size:573K _igbt

IXGH32N50B
IXGH32N50B

High Voltage IXGH 32N170 VCES = 1700 V IXGT 32N170 IC25 = 75 A IGBT VCE(sat) = 3.3 V tfi(typ) = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C75 A TO-247 AD (IXGH) IC90 TC = 90°C32 A ICM TC

3.11. ixgh32n90b2.pdf Size:199K _igbt

IXGH32N50B
IXGH32N50B

Advance Technical Information IXGH 32N90B2 VCES = 900 V HiPerFASTTM IGBT IXGT 32N90B2 IC25 = 64 A B2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 150 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V C (TAB) VGES Continuous ±20 V G VGEM Transient ±30 V C E IC25 TC = 25°C (limited by leads)

3.12. ixgh32n60cd1.pdf Size:160K _igbt

IXGH32N50B
IXGH32N50B

IXGH 32N60CD1 VCES = 600 V HiPerFASTTM IGBT IXGT 32N60CD1 IC25 = 60 A with Diode VCE(SAT)typ = 2.1 V tfi(typ) = 55 ns Light Speed Series TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G VGES Continuous ±20 V C (TAB) C VGEM Transient ±30 V E IC25 TC = 25°C60 A IC90 TC = 90°C32 A TO-268 (D

3.13. ixgh32n120a3.pdf Size:194K _igbt

IXGH32N50B
IXGH32N50B

GenX3TM 1200V VCES = 1200V IXGH32N120A3 IGBTs IC110 = 32A IXGT32N120A3 ≤ VCE(sat) ≤ ≤ 2.35V ≤ ≤ Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 1200 V E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V C (Tab) VGES Continuous ±20 V TO-247 (IXGH) VGEM Transient ±30 V IC25 TC = 25°C 75

3.14. ixgh32n60b.pdf Size:34K _igbt

IXGH32N50B
IXGH32N50B

HiPerFASTTM IGBT IXGH32N60B VCES = 600 V IC25 = 60 A VCE(sat) = 2.5 V tfi = 80 ns Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V C (TAB) VGEM Transient ±30 V G C IC25 TC = 25°C60 A E IC90 TC = 90°C32 A G = Gate, C = Collector, ICM TC = 25°C, 1 ms 120 A E = Emitter, TAB = Col

3.15. ixgh32n60bd1.pdf Size:125K _igbt

IXGH32N50B
IXGH32N50B

IXGH 32N60B HiPerFASTTM IGBT VCES = 600 V IXGT 32N60B IC25 = 60 A IXGH 32N60BD1 VCE(sat) = 2.3 V IXGT 32N60BD1 tfi(typ) = 85 ns (D1) Symbol Test Conditions Maximum Ratings TO-268 (IXGT) G VCES TJ = 25°C to 150°C 600 V E C VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V (TAB) VGES Continuous ±20 V TO-247 AD VGEM Transient ±30 V (IXGH) IC25 TC = 25°C60 A IC90 TC = 90°C3

3.16. ixgh32n100a3.pdf Size:120K _igbt

IXGH32N50B
IXGH32N50B

Advance Technical Information IXGH32N100A3 VCES = 1000V GenX3TM 1000V IGBT IXGT32N100A3 IC25 = 75A ≤ VCE(sat) ≤ ≤ 2.2V ≤ ≤ Ultra-low Vsat PT IGBTs for up to 4 kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1000 V G C (TAB) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1000 V C E VGES Continuous ± 20 V TO-268 (

Otros transistores... IXGH28N90B , IXGH30N30 , IXGH30N30S , IXGH30N60B , IXGH30N60BD1 , IXGH30N60BU1 , IXGH31N60 , IXGH31N60D1 , IXGP7N60B , IXGH32N50BU1 , IXGH32N60A , IXGH32N60AU1 , IXGH32N60B , IXGH32N60BD1 , IXGH32N60BU1 , IXGH32N60C , IXGH32N60CD1 .

 


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