MSG40T65FHC - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSG40T65FHC
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 284 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.9 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 65.8 nS
Coesⓘ - Capacitancia de salida, typ: 193 pF
Qgⓘ - Carga total de la puerta, typ: 75.3 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de MSG40T65FHC - IGBT
MSG40T65FHC Datasheet (PDF)
msg40t65fhc.pdf
MSG40T65FHCFeatures Low gate charge Trench FS Technology, saturation voltage: V ,CE(sat)type =1.7V,I =40A and TC =25CC RoHS productApplications General purpose inverters UPSAbsolute RatingsTc=25Parameter Symbol Value UnitCollector-Emmiter Voltage Vces 650 V80 AIc T=25*Collector Current-continuousT=10040 ACollector Curren
msg40t65fh.pdf
MSG40T65FH650V Field stop Trench IGBTFeatures Fast Switching & Low VCE[sat] High Input Impedance VCE(sat) = 1.88V @ IC = 40A High Input Impedance Short circuit withstand time 10 sApplications PFC UPS Inverter Welding MachineAbsolute Maximum RatingsParameter Symbol Value UnitCollector-emitter voltage V 650CESVGate-emitter voltage
msg40t65fl.pdf
Ordering Information Part Number Marking Temp. Range Package Packing RoHS Status MSG40T65FL 40T65FL -55~175C TO-247 Tube Halogen Free Electrical Characteristic (T = 25C unless otherwise specified) vjParameter Symbol Conditions Min Typ Max UnitStatic Characteristic Collector-emitter breakdown voltage BV I = 2mA, V = 0V 650 - - VCES C GEI = 40A, V = 15V, T = 25C 1.95 2.4
msg40t65ffc.pdf
MSG40T65FFCFeatures Low gate charge Trench FS Technology, saturation voltage: V ,CE(sat)type =1.8V,I =40A and TC =25CC RoHS productApplications General purpose inverters UPSAbsolute RatingsTc=25Parameter Symbol Value UnitCollector-Emmiter Voltage Vces 650 V80 AIc T=25*Collector Current-continuousT=10040 ACollector Curren
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2