MSG50T120FHW Todos los transistores

MSG50T120FHW 1200V Field stop Trench IGBT Features High Speed Switching & Low Power Loss High Input Impedance VCE(sat) = 2V @ IC = 50A High Input Impedance Applications PFC UPS Inverter Absolute Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V 1200 CES V Gate-emitter voltage V 20 GES T =25 C 100 C Collector curre I C T

MSG50T120FQW Features Extremely Efficient Trench with Field Stop Technology TJmax =175 C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 s Short Circuit Capability Applications Solar Inverter UPS Absolute Ratings Tc=25 Parameter Symbol Value Unit Collector-Emmiter Voltage V 1200 V CES 100 A Ic T=25 Collector Curren

MSG50T65FQC N-Channel IGBT Features Low gate charge Trench FS Technology Saturation voltage VCE(sat),typ=1.6V @IC=50A and TC=25 Applications General purpose inverter UPS Absolute Ratings(Tc=25 ) Value Parameter Symbol Unit MSG50N65FQC Collector-Emmiter Voltage V 650 V ce I C 100 A *Collector Current-continuous T=25 T=100 50 A I F 100 A Diod

MSG50T65FHC Features Low gate charge Trench FS Technology, saturation voltage V , CE(sat) type =1.6V,I =50A and TC =25 C C RoHS product Applications General purpose inverters UPS Absolute Ratings Tc=25 Parameter Symbol Value Unit Collector-Emmiter Voltage Vces 650 V 100 A Ic T=25 *Collector Current-continuous T=100 50 A Collector Curre