MSG80D60FLC - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSG80D60FLC
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 260 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.25 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 175 pF
Qgⓘ - Carga total de la puerta, typ: 110 nC
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
MSG80D60FLC Datasheet (PDF)
msg80d60flc.pdf
MSG80D60FLCFeatures Low gate charge Trench-Stop Technology High speed switching Saturation voltage:VCE(sat),typ= 1.25V @IC=80A and TC=25Applications General purpose inverters Induction heating(IH) Welding Converters UPSAbsolute RatingsTc=25Parameter Symbol MSG80D60FLC UnitCollector-Emmiter Voltage Vces 600 VCollector Current-cont
msg80n60fqc.pdf
MSG80N60FQCFeatures Low gate charge Trench-Stop Technology High speed switching Saturation voltage:VCE(sat),typ= 1.25V @IC=80A and TC=25Applications General purpose inverters Induction heating(IH) Welding Converters UPSAbsolute RatingsTc=25Parameter Symbol MSG80D60FLC UnitCollector-Emmiter Voltage Vces 600 V180 AIc T=25Col
msg80n350hlc0.pdf
MSG80N350HLC0Features High Current Capability Low Saturation Voltage:VCE(sat) = 1.3V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 180CCollector Current ICT =100 80 ACPulsed Collector
msg80n350fqc.pdf
MSG80N350FQCFeatures Fast switching Low Saturation Voltage:VCE(sat) = 1.61V @ IC = 80 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 180CCollector Current ICT =100 80 ACPulsed Collector Current T
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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