JNG30N120HS2 Todos los transistores

 

JNG30N120HS2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: JNG30N120HS2
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 260 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 53 nS
   Coesⓘ - Capacitancia de salida, typ: 270 pF
   Qgⓘ - Carga total de la puerta, typ: 165 nC
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

JNG30N120HS2 Datasheet (PDF)

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JNG30N120HS2

JNG30N120HS2 JNG30N120HS2 IGBT Features 1200V,30A V =2.2V@V =15V,I =30A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology General Description JIAEN NPT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, gener

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JNG30N120HS2

JNG30N120HS3 IGBT Features 1200V,30A V =2.2V@V =15V,I =30A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology General Description JIAEN NPT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and

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 jng30t60hs.pdf pdf_icon

JNG30N120HS2

JNG30T60HS JNG30T60HS IGBT Features 600V,30A V =1.9V@V =15V,I =30A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application such as SMPS, general inverter and other soft switching applications. Absolute Ma

 9.2. Size:609K  jiaensemi
 jng30t60fs.pdf pdf_icon

JNG30N120HS2

JNG30T60FS JNG30T60FS IGBT Features 600V,30A V =1.9V@V =15V,I =30A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application such as SMPS, general inverter and other soft switching applications. Absolute Max

MOSTRAR MÁS

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: HGT5A40N60A4D | VS-GB100TP120N | FD800R33KF2C-K | SKM150GB174D | CM400DY-24NF | IGW75N60H3 | IKB40N65ES5

 

 
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