JNG50N120FLU1 Todos los transistores

 

JNG50N120FLU1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: JNG50N120FLU1
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 320
   Tensión máxima colector-emisor |Vce|, V: 1200
   Tensión máxima puerta-emisor |Vge|, V: 30
   Colector de Corriente Continua a 25℃ |Ic|, A: 100
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.5
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 103
   Capacitancia de salida (Cc), typ, pF: 314
   Paquete / Cubierta: TO264

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JNG50N120FLU1 Datasheet (PDF)

 ..1. Size:668K  jiaensemi
jng50n120flu1.pdf

JNG50N120FLU1
JNG50N120FLU1

JNG50N120FLU1 IGBT Features 1200V,50A V =2.5V@V =15V,I =50A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms General Description JIAEN FS-IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switching applications. Abs

 5.1. Size:539K  jiaensemi
jng50n120qfu1.pdf

JNG50N120FLU1
JNG50N120FLU1

JNG50N120QFU1 IGBT Features 1200V,50A V =2.4V@V =15V,I =50A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms General Description JIAEN FS-IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switching applications. Abs

 5.2. Size:1079K  jiaensemi
jng50n120ls.pdf

JNG50N120FLU1
JNG50N120FLU1

JNG50N120LS IGBT Features 1200V,50A V =2.1V@V =15V,I =50A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology General Description JIAEN NPT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and o

 5.3. Size:938K  jiaensemi
jng50n120qs1.pdf

JNG50N120FLU1
JNG50N120FLU1

JNG50N120QS1 IGBT Features 1200V,50A V =2.1V@V =15V,I =50A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology General Description TO-247-3L Plus JIAEN NPT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, gene

Otros transistores... JNG40T120HFU2 , JNG40T120HI , JNG40T120HP , JNG40T120HS , JNG40T60AI , JNG40T60HS , JNG40T65HUY2 , JNG40T65HYU1 , MBQ50T65FESC , JNG50N120LS , JNG50N120QFU1 , JNG50N120QS1 , JNG5T65DS1 , JNG60T60HS , JNG75T120LS , JNG75T120QS1 , JNG75T120QZU1 .

 

 
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Recientemente añadidas las descripciónes de los transistores

IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ

 

 

 
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