JNG50N120QS1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JNG50N120QS1 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 320 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
trⓘ - Tiempo de subida, typ: 80 nS
Coesⓘ - Capacitancia de salida, typ: 160 pF
Encapsulados: TO247
📄📄 Copiar
Búsqueda de reemplazo de JNG50N120QS1 IGBT
- Selecciónⓘ de transistores por parámetros
JNG50N120QS1 datasheet
jng50n120qs1.pdf
JNG50N120QS1 IGBT Features 1200V,50A V =2.1V@V =15V,I =50A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology General Description TO-247-3L Plus JIAEN NPT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, gene
jng50n120qfu1.pdf
JNG50N120QFU1 IGBT Features 1200V,50A V =2.4V@V =15V,I =50A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms General Description JIAEN FS-IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switching applications. Abs
jng50n120ls.pdf
JNG50N120LS IGBT Features 1200V,50A V =2.1V@V =15V,I =50A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology General Description JIAEN NPT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and o
jng50n120flu1.pdf
JNG50N120FLU1 IGBT Features 1200V,50A V =2.5V@V =15V,I =50A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms General Description JIAEN FS-IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switching applications. Abs
Otros transistores... JNG40T120HS, JNG40T60AI, JNG40T60HS, JNG40T65HUY2, JNG40T65HYU1, JNG50N120FLU1, JNG50N120LS, JNG50N120QFU1, IRGP4066D, JNG5T65DS1, JNG60T60HS, JNG75T120LS, JNG75T120QS1, JNG75T120QZU1, JNG75T65HXU1, JNG75T65HYU2, JNG80T60LS
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2sa726 transistor | 7506 mosfet | irlr8726 datasheet | ru7088r mosfet | mp40 transistor | fgpf4636 datasheet | 2sc1945 | c2383




