JNG75T120QS1 Todos los transistores

 

JNG75T120QS1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: JNG75T120QS1
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 625 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 115 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 470 nS
   Coesⓘ - Capacitancia de salida, typ: 312 pF
   Paquete / Cubierta: TO247

 

JNG75T120QS1 Datasheet (PDF)

 ..1. Size:1270K  jiaensemi
jng75t120qs1.pdf

JNG75T120QS1
JNG75T120QS1

JNG75T120QS1 IGBT Features 1200V,75A V = 1.9V@V = 15V,I = 75A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms TO-247-3L Plus General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application such as induction heatingUPS, AC & DC motor controls and general purpos

 4.1. Size:1271K  jiaensemi
jng75t120qzu1.pdf

JNG75T120QS1
JNG75T120QS1

JNG75T120QZU1 IGBT Features 1200V,75A V =1.85V@V =15V,I =75A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA General Description JIAEN FS-IGBTs offer lower losses and higher energy efficiency for application such as general inverter and other soft switching applications. Absolute M

 5.1. Size:1087K  jiaensemi
jng75t120ls.pdf

JNG75T120QS1
JNG75T120QS1

JNG75T120LS IGBT Features 1200V 75A V =1.95V @V =15V,I =75A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switch

 8.1. Size:1049K  jiaensemi
jng75t65hyu2.pdf

JNG75T120QS1
JNG75T120QS1

JNG75T65HYU2 IGBT Features 650V,75A V =1.80V@V =15V,I =75A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms General Description JIAEN Trench FS-IGBTs offer lower losses and higher energy efficiency for application such as PFC, Inverter and Uninterruptible Power Supplies. Absolute Maximum Ratings Sym

 8.2. Size:1004K  jiaensemi
jng75t65hxu1.pdf

JNG75T120QS1
JNG75T120QS1

JNG75T65HXU1 IGBT Features 650V,75A V =1.9V@V =15V,I =75A CE(sat)(typ.) GE C High speed switching Positive VCE(on) Temperature Coefficient Trench & Field Stop Technology General Description JIAEN FS-IGBTs offer lower losses and higher energy efficiency for application such as solar inverterservo drive amplifier and ups applications. Absolute Maxim

Otros transistores... JNG40T65HYU1 , JNG50N120FLU1 , JNG50N120LS , JNG50N120QFU1 , JNG50N120QS1 , JNG5T65DS1 , JNG60T60HS , JNG75T120LS , IKW50N60T , JNG75T120QZU1 , JNG75T65HXU1 , JNG75T65HYU2 , JNG80T60LS , JNG8T60FT1 , JT075N065WED , AOK40B65H2AL , MBQ40T120FDS .

 

 
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