JNG75T65HYU2 Todos los transistores

 

JNG75T65HYU2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: JNG75T65HYU2
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 405 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 133 nS
   Coesⓘ - Capacitancia de salida, typ: 200 pF
   Paquete / Cubierta: TO247

 Búsqueda de reemplazo de JNG75T65HYU2 - IGBT

 

JNG75T65HYU2 Datasheet (PDF)

 ..1. Size:1049K  jiaensemi
jng75t65hyu2.pdf

JNG75T65HYU2 JNG75T65HYU2

JNG75T65HYU2 IGBT Features 650V,75A V =1.80V@V =15V,I =75A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms General Description JIAEN Trench FS-IGBTs offer lower losses and higher energy efficiency for application such as PFC, Inverter and Uninterruptible Power Supplies. Absolute Maximum Ratings Sym

 5.1. Size:1004K  jiaensemi
jng75t65hxu1.pdf

JNG75T65HYU2 JNG75T65HYU2

JNG75T65HXU1 IGBT Features 650V,75A V =1.9V@V =15V,I =75A CE(sat)(typ.) GE C High speed switching Positive VCE(on) Temperature Coefficient Trench & Field Stop Technology General Description JIAEN FS-IGBTs offer lower losses and higher energy efficiency for application such as solar inverterservo drive amplifier and ups applications. Absolute Maxim

 8.1. Size:1087K  jiaensemi
jng75t120ls.pdf

JNG75T65HYU2 JNG75T65HYU2

JNG75T120LS IGBT Features 1200V 75A V =1.95V @V =15V,I =75A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switch

 8.2. Size:1271K  jiaensemi
jng75t120qzu1.pdf

JNG75T65HYU2 JNG75T65HYU2

JNG75T120QZU1 IGBT Features 1200V,75A V =1.85V@V =15V,I =75A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA General Description JIAEN FS-IGBTs offer lower losses and higher energy efficiency for application such as general inverter and other soft switching applications. Absolute M

 8.3. Size:1270K  jiaensemi
jng75t120qs1.pdf

JNG75T65HYU2 JNG75T65HYU2

JNG75T120QS1 IGBT Features 1200V,75A V = 1.9V@V = 15V,I = 75A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms TO-247-3L Plus General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application such as induction heatingUPS, AC & DC motor controls and general purpos

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: SGH80N60UF | RJP6065DPM | TT100N120PF1E | RJH60M6DPQ-A0 | RJP63F3DPP-M0 | APT15GP60BDQ1 | JNG50N120QFU1

 

 
Back to Top