JNG75T65HYU2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JNG75T65HYU2
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 405
Tensión máxima colector-emisor |Vce|, V: 650
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 150
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.8
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 133
Capacitancia de salida (Cc), typ, pF: 200
Carga total de la puerta (Qg), typ, nC: 125
Paquete / Cubierta: TO247
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JNG75T65HYU2 Datasheet (PDF)
jng75t65hyu2.pdf
JNG75T65HYU2 IGBT Features 650V,75A V =1.80V@V =15V,I =75A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms General Description JIAEN Trench FS-IGBTs offer lower losses and higher energy efficiency for application such as PFC, Inverter and Uninterruptible Power Supplies. Absolute Maximum Ratings Sym
jng75t65hxu1.pdf
JNG75T65HXU1 IGBT Features 650V,75A V =1.9V@V =15V,I =75A CE(sat)(typ.) GE C High speed switching Positive VCE(on) Temperature Coefficient Trench & Field Stop Technology General Description JIAEN FS-IGBTs offer lower losses and higher energy efficiency for application such as solar inverterservo drive amplifier and ups applications. Absolute Maxim
jng75t120qzu1.pdf
JNG75T120QZU1 IGBT Features 1200V,75A V =1.85V@V =15V,I =75A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA General Description JIAEN FS-IGBTs offer lower losses and higher energy efficiency for application such as general inverter and other soft switching applications. Absolute M
jng75t120ls.pdf
JNG75T120LS IGBT Features 1200V 75A V =1.95V @V =15V,I =75A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switch
jng75t120qs1.pdf
JNG75T120QS1 IGBT Features 1200V,75A V = 1.9V@V = 15V,I = 75A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms TO-247-3L Plus General Description JIAEN Trench IGBTs offer lower losses and higher energy efficiency for application such as induction heatingUPS, AC & DC motor controls and general purpos
Otros transistores... JNG50N120QFU1 , JNG50N120QS1 , JNG5T65DS1 , JNG60T60HS , JNG75T120LS , JNG75T120QS1 , JNG75T120QZU1 , JNG75T65HXU1 , BT15T120ANF , JNG80T60LS , JNG8T60FT1 , JT075N065WED , AOK40B65H2AL , MBQ40T120FDS , FGA40N60UFD , CRG05T60A44S-G , CRG08T60A83L .
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Recientemente añadidas las descripciónes de los transistores
IGBT: HIA20N140IH-DA | HIA50N65IH-JA | HIA50N65H-SA | HIA50N65T-SA | HIA50N65H-JA | HIA50N65T-JA | HIA30N140CIH-DA | HIA40N120T-SA | HIW30N65T-SA | HIA30N65T-SA | HIA75N65H-SA