CRG08T60A83L - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CRG08T60A83L
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 104 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 16 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 23 nS
Coesⓘ - Capacitancia de salida, typ: 63 pF
Paquete / Cubierta: TO220
Búsqueda de reemplazo de CRG08T60A83L IGBT
CRG08T60A83L Datasheet (PDF)
crg08t60a83l.pdf

Silicon FS Trench IGBT CRG08T60A83L General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) ItC offering 8 A echnology, superior conduction and switching performances. Ptot TC=25 104 W VCE(sat) 1.8 V TO-220 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage: VCE(sat), t
crg08t60a93l.pdf

Silicon FS Trench IGBT CRG08T60A93L General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) ItC offering 8 A echnology, superior conduction and switching performances. Ptot TC=25 32 W VCE(sat) 1.8 V TO-220F Features FS Trench Technology, Positive temperature coefficient Low saturation voltage: VCE(sat), t
Otros transistores... JNG75T65HYU2 , JNG80T60LS , JNG8T60FT1 , JT075N065WED , AOK40B65H2AL , MBQ40T120FDS , FGA40N60UFD , CRG05T60A44S-G , IRG4PC50UD , CRG08T60A93L , CRG15T120BK3SD , CRG15T60A03L , CRG15T60A83L , CRG15T60A93L , CRG15T60A94S , CRG15T60A84S , CRG25T120BNR3S .
History: FGW35N60H
History: FGW35N60H



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