CRG25T120BNR3S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CRG25T120BNR3S
Tipo de transistor: IGBT + Diode
Código de marcado: G25T120BKR3S
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 208
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 50
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.95
Tensión máxima de puerta-umbral |VGE(th)|, V: 7.5
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 36
Capacitancia de salida (Cc), typ, pF: 59
Carga total de la puerta (Qg), typ, nC: 142
Paquete / Cubierta: TO3P
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CRG25T120BNR3S Datasheet (PDF)
crg25t120bnr3s.pdf
Silicon FS Trench IGBT CRG25T120BNR3S General Description VCES 1200 V Using CRM's proprietary trench design, advanced FS(field stop) IC 25 A technology and integrated with Free Wheeling Diode, the 1200V Trench FS Ptot (TC=25) 208 W IGBT offers superior conduction and switching performances, high VCE(SAT) 1.95 V avalanche ruggedness. TO-3PN Features T
crg25t120bk3s.pdf
CRG25T120BK3S CRG25T120BK3S VCES 1200 V RoHS IC 25 A Ptot TC=25 278 W VCE(sat) 2.0 V TO-247
crg25t120bk3s.pdf
Silicon FS Trench IGBT CRG25T120BK3S General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced Field IC 25 A Stop (FS) technology, offering superior conduction and switching 278 W Ptot TC=25VCE(sat) 2.0 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturatio
crg25t135bkr3s.pdf
Silicon FS Trench IGBT CRG25T135BKR3S General Description VCES 1350 V Using CRM's proprietary trench design, advanced FS(field stop) IC 25 A technology and integrated with Free Wheeling Diode, the 1350V Trench FS Ptot (TC=25) 208 W IGBT offers superior conduction and switching performances, high VCE(SAT) 1.95 V avalanche ruggedness. TO-247 Features Trench
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
Recientemente añadidas las descripciónes de los transistores
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