CRG60T60AK3SD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

CRG60T60AK3SD Datasheet (PDF)

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Silicon FS Trench IGBT CRG60T60AK3SD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 60 A Stop (FS) technology, offering superior conduction and switching 403 W Ptot TC=25VCE(sat) 1.72 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturat

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CRG60T60AK3HD CRG60T60AK3HD FS IGBT VCES 600 V IC 60 A RoHS 483 W Ptot TC=25VCE(sat) 1.85 V TO-247 FS VCE(sat),

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Silicon FS Trench IGBT CRG60T60AK3HD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 60 A Stop (FS) technology, offering superior conduction and switching 403 W Ptot TC=25VCE(sat) 1.85 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturat

3.3. Size:1259K wuxi china
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Silicon FS Trench IGBT CRG60T60AK3H General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field IC 60 A Stop (FS) technology, offering superior conduction and switching 403 W Ptot TC=25VCE(sat) 1.85 V performances. RoHS Compliant. Features FS Trench Technology, Positive temperature coefficient Low saturation voltag

Otros transistores... CRG15T60A84S , CRG25T120BNR3S , CRG25T135BKR3S , CRG30T60AK3HD , CRG40T60AK3H , CRG40T60AK3SD , CRG50T60AK3HD , CRG60T60AK3H , IRG4PF50W , SRE100N065FSU , SRE100N065FSU2D6 , SRE100N065FSUD6 , SRE100N065FSUD8 , SRE100N120FSUDA , SRE15N060FSUDE , SRE15N065FSUDJ , SRE160N065FSUD8 .