SRE100N065FSUD8 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRE100N065FSUD8
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 395 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 125 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.46 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 110 nS
Coesⓘ - Capacitancia de salida, typ: 350 pF
Paquete / Cubierta: TO247
Búsqueda de reemplazo de SRE100N065FSUD8 - IGBT
SRE100N065FSUD8 Datasheet (PDF)
sre100n065fsud8.pdf
Datasheet 100A 650V Trench Fieldstop IGBT with anti-parallel diode SRE100N065FSUD8 General Description Symbol The SRE100N065FSUD8 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE100N065FSUD8 package is TO-247. Figure 1 Symbol of SR
sre100n065fsud6.pdf
Datasheet 100A 650V Trench Fieldstop IGBT with anti-parallel diode SRE100N065FSUD6 General Description Symbol The SRE100N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE100N065FSUD6 package is TO-247. Figure 1 Symbol of SR
sre100n065fsu2d6.pdf
Datasheet 100A 650V Trench Fieldstop IGBT with FRD SRE100N065FSU2D6 General Description Symbol The SRE100N065FSU2D6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low conduction loss, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. The SRE100N065FSU2D6 package is TO-247. Features Figure 1 Symbol of SRE100N0
sre100n065fsu.pdf
Datasheet 100A 650V Trench Fieldstop IGBT SRE100N065FSU General Description Symbol The SRE100N065FSU is a Field Stop Trench CIGBT, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. GThe SRE100N065FSU package is TO-247. EFeatures High Breakdown Voltage to 650V Figure 1 Symbol of SRE10
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2