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SRE100N065FSUD8 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SRE100N065FSUD8
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 395 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 125 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.46 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 110 nS
   Coesⓘ - Capacitancia de salida, typ: 350 pF
   Qgⓘ - Carga total de la puerta, typ: 215 nC
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

SRE100N065FSUD8 Datasheet (PDF)

 0.1. Size:909K  sanrise-tech
 sre100n065fsud8.pdf pdf_icon

SRE100N065FSUD8

Datasheet 100A 650V Trench Fieldstop IGBT with anti-parallel diode SRE100N065FSUD8 General Description Symbol The SRE100N065FSUD8 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE100N065FSUD8 package is TO-247. Figure 1 Symbol of SR

 0.2. Size:897K  sanrise-tech
 sre100n065fsud6.pdf pdf_icon

SRE100N065FSUD8

Datasheet 100A 650V Trench Fieldstop IGBT with anti-parallel diode SRE100N065FSUD6 General Description Symbol The SRE100N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE100N065FSUD6 package is TO-247. Figure 1 Symbol of SR

 1.1. Size:1313K  sanrise-tech
 sre100n065fsu2d6.pdf pdf_icon

SRE100N065FSUD8

Datasheet 100A 650V Trench Fieldstop IGBT with FRD SRE100N065FSU2D6 General Description Symbol The SRE100N065FSU2D6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low conduction loss, high energy efficiency for switching applications such as Inverter, PFC, Converter, etc. The SRE100N065FSU2D6 package is TO-247. Features Figure 1 Symbol of SRE100N0

 1.2. Size:888K  sanrise-tech
 sre100n065fsu.pdf pdf_icon

SRE100N065FSUD8

Datasheet 100A 650V Trench Fieldstop IGBT SRE100N065FSU General Description Symbol The SRE100N065FSU is a Field Stop Trench CIGBT, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. GThe SRE100N065FSU package is TO-247. EFeatures High Breakdown Voltage to 650V Figure 1 Symbol of SRE10

MOSTRAR MÁS

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: APTGF90SK60T

 

 
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